发明申请
- 专利标题: Contact Scheme for MOSFETs
- 专利标题(中): MOSFET的接触方案
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申请号: US11833128申请日: 2007-08-02
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公开(公告)号: US20080258228A1公开(公告)日: 2008-10-23
- 发明人: Harry Chuang , Kong-Beng Thei , Mong Song Liang , Jung-Hui Kao , Sheng-Chen Chung , Chung Long Cheng , Shun-Jang Liao
- 申请人: Harry Chuang , Kong-Beng Thei , Mong Song Liang , Jung-Hui Kao , Sheng-Chen Chung , Chung Long Cheng , Shun-Jang Liao
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/8238
摘要:
A semiconductor structure and methods of forming the same are provided. The semiconductor structure includes a semiconductor substrate; a first inter-layer dielectric (ILD) over the semiconductor substrate; a contact extending from a top surface of the first ILD into the first ILD; a second ILD over the first ILD; a bottom inter-metal dielectric (IMD) over the second ILD; and a dual damascene structure comprising a metal line in the IMD and a via in the second ILD, wherein the via is connected to the contact.
公开/授权文献
- US07898037B2 Contact scheme for MOSFETs 公开/授权日:2011-03-01