发明申请
- 专利标题： METHOD OF MAKING A SEMICONDUCTOR DEVICE USING A STRESSOR
- 专利标题（中）： 使用压力器制造半导体器件的方法
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申请号： US11737496申请日： 2007-04-19
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公开(公告)号： US20080261362A1公开(公告)日： 2008-10-23
- 发明人: Da Zhang , Xiangzheng Bo , Venkat R. Kolagunta
- 申请人： Da Zhang , Xiangzheng Bo , Venkat R. Kolagunta
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method for forming a semiconductor device includes providing a substrate and forming a p-channel device and an n-channel device, each of the p-channel device and the n-channel device comprising a source, a drain, and a gate, the p-channel device having a first sidewall spacer and the n-channel device having a second sidewall spacer. The method further includes forming a liner and forming a tensile stressor layer over the liner and removing a portion of the tensile stressor layer from a region overlying the p-channel device. The method further includes transferring a stress characteristic of an overlying portion of a remaining portion of the tensile stressor layer to a channel of the n-channel device. The method further includes using the remaining portion of the tensile stressor layer as a hard mask, forming a first recess and a second recess adjacent the gate of the p-channel device.
公开/授权文献
- US07727870B2 Method of making a semiconductor device using a stressor 公开/授权日：2010-06-01
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