发明申请
US20080272411A1 SEMICONDUCTOR DEVICE WITH MULTIPLE TENSILE STRESSOR LAYERS AND METHOD
有权
具有多个拉伸压力层的半导体器件和方法
- 专利标题: SEMICONDUCTOR DEVICE WITH MULTIPLE TENSILE STRESSOR LAYERS AND METHOD
- 专利标题(中): 具有多个拉伸压力层的半导体器件和方法
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申请号: US11744581申请日: 2007-05-04
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公开(公告)号: US20080272411A1公开(公告)日: 2008-11-06
- 发明人: Xiangzheng Bo , Tien Ying Luo , Kurt H. Junker , Paul A. Grudowski , Venkat R. Kolagunta
- 申请人: Xiangzheng Bo , Tien Ying Luo , Kurt H. Junker , Paul A. Grudowski , Venkat R. Kolagunta
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/3205
摘要:
A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.