发明申请
- 专利标题： Memory Device and Semiconductor Device
- 专利标题（中）： 存储器件和半导体器件
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申请号： US11578057申请日： 2006-01-26
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公开(公告)号： US20080283616A1公开(公告)日： 2008-11-20
- 发明人: Mikio Yukawa , Hiroko Abe , Shunpei Yamazaki
- 申请人： Mikio Yukawa , Hiroko Abe , Shunpei Yamazaki
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2005-024596 20050131
- 国际申请： PCT/JP06/01705 WO 20060126
- 主分类号： G06K19/077
- IPC分类号： G06K19/077 ; G11C11/00
摘要：
It is an object of the present invention to provide an involatile memory device, in which additional writing of data is possible other than in manufacturing steps and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is also an object of the present invention to provide an inexpensive involatile memory device and a semiconductor device having high reliability. According to the present invention, a memory device includes a first conductive layer, a second conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, where the first conductive layer has a convex portion.
公开/授权文献
- US08023302B2 Memory device and semiconductor device 公开/授权日：2011-09-20
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