发明申请
US20080283972A1 Silicon Compounds for Producing Sio2-Containing Insulating Layers on Chips
审中-公开
用于在芯片上生产含Sio2的绝缘层的硅化合物
- 专利标题： Silicon Compounds for Producing Sio2-Containing Insulating Layers on Chips
- 专利标题（中）： 用于在芯片上生产含Sio2的绝缘层的硅化合物
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申请号： US10586675申请日： 2004-12-22
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公开(公告)号： US20080283972A1公开(公告)日： 2008-11-20
- 发明人: Ekkehard Muh , Hartwig Rauleder , Harald Klein , Jaroslaw Monkiewicz , Iordanis Savvopoulos
- 申请人： Ekkehard Muh , Hartwig Rauleder , Harald Klein , Jaroslaw Monkiewicz , Iordanis Savvopoulos
- 申请人地址： DE Duesseldorf
- 专利权人： DEGUSSA AG
- 当前专利权人： DEGUSSA AG
- 当前专利权人地址： DE Duesseldorf
- 优先权： DE102004008442.4 20040219
- 国际申请： PCT/EP2004/053669 WO 20041222
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/31
摘要：
The present invention relates to a process for producing an SiO2-containing insulating layer on chips and the use of specific precursors for this purpose. The invention further relates to an insulating layer obtainable in this way and also to chips which have been provided with such an insulating layer.
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