摘要:
The present invention relates to a process for producing an SiO2-containing insulating layer on chips and the use of specific precursors for this purpose. The invention further relates to an insulating layer obtainable in this way and also to chips which have been provided with such an insulating layer.
摘要:
The present invention relates to a specific process for preparing organosilane esters of the formula (I) and a composition comprising more than 98% by weight of organosilane esters of the formula (I) and less than 2.0% by weight of at least one hydrocarbon and to the use of such a composition as precursor for producing a layer or film having a dielectric constant of 1
摘要:
The invention relates to a process for dismutating at least one halosilane and reducing the content of extraneous metal and/or a compound containing extraneous metal in the at least one halosilane and in the at least one silane obtained, by contacting at least one halosilane of the general formula I, HnSiClm (I), where n and m are integers and n=1, 2 or 3 and m=1, 2 or 3 and n+m=4, with a particulate, organic, amino-functional resin to obtain at least one silane of the general formula II, HaSiClb (II), where a and b are integers and a=0, 2, 3 or 4 and b=0, 1, 2 or 4 where a+b=4, in one step, in which the content of extraneous metal and/or compounds containing extraneous metal has been reduced compared to the halosilane of the formula I. The invention further provides for the use of this resin for dismutating halosilanes and as an absorbent of extraneous metals or compounds containing extraneous metal in a process for preparing monosilane.
摘要:
The invention relates to a process for treating a composition comprising organosilanes and at least one polar organic compound and/or at least one extraneous metal and/or a compound containing extraneous metal, wherein the composition is contacted with at least one adsorbent and a composition in which the content of the organic polar compound and/or of the extraneous metal and/or of the compound containing extraneous metal is reduced is subsequently obtained, and also to a corresponding composition in which the content of polar organic compounds and/or extraneous metals has been reduced to traces, and to the use of organic resins, activated carbons, silicates and/or zeolites for reducing the amounts of the compounds mentioned.
摘要:
The invention relates to a method for the treatment of a composition containing inorganic silanes and at least one foreign metal and/or a compound containing a foreign metal, wherein the composition is brought in contact with at least one adsorption agent, and for obtaining the composition, in which the content of foreign metal and/or of a compound containing a foreign metal is reduced, and to a corresponding composition having a reduced foreign metal content, and further to the use of organic resins, activated carbons, silicates, and/or zeolites for the reduction of foreign metals and/or compounds containing foreign metals in compositions of inorganic silanes.
摘要:
Particulate magnesium ethoxide having a high coarse particle content can be obtained in a simple and economical manner by the present invention, which provides a process for preparing particulate magnesium ethoxide having a coarse grain content, and includes reacting metallic, optionally activated, magnesium with liquid ethanol under pressure at a temperature above 78° C. The present invention also relates to particulate magnesium ethoxide having a coarse grain content, which contains: 500 &mgr;m.
摘要:
Acyloxysilanes are prepared by a process of reacting an organochlorosilane with an excess of monocarboxylic anhydride at elevated temperature, thereby forming product acyloxysilane and by-product acyl chloride transferring the reaction mixture to the middle inlet of a separation tower having a still pot at its base, removing excess carboxylic anhydride by distillation at the tower top under reduced pressure, removing acyl chloride by-product from the separation tower, uniformly removing acyloxysilane from the tower still pot, and reacting virtually quantitatively the residual acid chloride present in the acyloxysilane removed from the still pot by adding a metal carboxylate to the acyloxysilane and separating the metal chlorides formed from the product.
摘要:
A process for removing residual acidic chlorine from acyloxysilanes, comprises virtually quantitatively reacting metal carboxylates with the acidic chlorine present in the acyloxysilane, and the metal chlorides formed being separated off.
摘要:
The invention relates to a process for dismutating at least one halosilane and reducing the content of extraneous metal and/or a compound containing extraneous metal in the at least one halosilane and in the at least one silane obtained, by contacting at least one halosilane of the general formula I, HnSiClm (I), where n and m are integers and n=1, 2 or 3 and m=1, 2 or 3 and n+m=4, with a particulate, organic, amino-functional resin to obtain at least one silane of the general formula II, HaSiClb (II), where a and b are integers and a=0, 2, 3 or 4 and b=0, 1, 2 or 4 where a+b=4, in one step, in which the content of extraneous metal and/or compounds containing extraneous metal has been reduced compared to the halosilane of the formula I. The invention further provides for the use of this resin for dismutating halosilanes and as an absorbent of extraneous metals or compounds containing extraneous metal in a process for preparing monosilane.
摘要:
Cyclic silane esters and solvolysis products thereof and processes for making these materials. The cyclic silanes and their solvolysis products are useful as adhesives, crosslinking agents and reagents for modifying polymers containing ester groups.