发明申请
- 专利标题: MIM Capacitors
- 专利标题(中): MIM电容器
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申请号: US12182901申请日: 2008-07-30
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公开(公告)号: US20080290459A1公开(公告)日: 2008-11-27
- 发明人: Hans-Joachim Barth , Petra Felsner , Erdem Kaltalioglu , Gerald R. Friese
- 申请人: Hans-Joachim Barth , Petra Felsner , Erdem Kaltalioglu , Gerald R. Friese
- 主分类号: H01L29/92
- IPC分类号: H01L29/92
摘要:
A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom plate, and depositing an insulating layer over the MIM capacitor bottom plate. The insulating layer is patterned with a MIM capacitor top plate pattern, and a MIM dielectric material is deposited over the patterned insulating layer. A conductive material is deposited over the MIM dielectric material, and the wafer is planarized to remove the conductive material and MIM dielectric material from the top surface of the insulating layer and form a MIM capacitor top plate. A second cap layer is selectively formed over the MIM capacitor top plate.
公开/授权文献
- US07843035B2 MIM capacitors with catalytic activation layer 公开/授权日:2010-11-30
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