发明申请
US20090001462A1 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
有权
具有高击穿电压和低导通电阻的侧向功率MOSFET
- 专利标题: Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- 专利标题(中): 具有高击穿电压和低导通电阻的侧向功率MOSFET
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申请号: US12205961申请日: 2008-09-08
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公开(公告)号: US20090001462A1公开(公告)日: 2009-01-01
- 发明人: Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
- 申请人: Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.