公开(公告)号：US07989890B2

公开(公告)日：2011-08-02

申请号：US12205961

申请日：2008-09-08

申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.

摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

公开(公告)号：US20090001462A1

公开(公告)日：2009-01-01

申请号：US12205961

申请日：2008-09-08

申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

IPC分类号： H01L29/76

CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.

摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

公开(公告)号：US08389341B2

公开(公告)日：2013-03-05

申请号：US13175246

申请日：2011-07-01

申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

IPC分类号： H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.

摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

公开(公告)号：US20120003803A1

公开(公告)日：2012-01-05

申请号：US13175246

申请日：2011-07-01

申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

IPC分类号： H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.

摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

公开(公告)号：US08129783B2

公开(公告)日：2012-03-06

申请号：US12329285

申请日：2008-12-05

申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.

摘要翻译： 提供具有高击穿电压和低导通电阻的半导体器件。 一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。 在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。 场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。 晶体管的源极和漏极区位于高压P阱和高压N阱中。 可选地，在场电介质下的N阱区域中形成P场环。 在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

公开(公告)号：US20080090347A1

公开(公告)日：2008-04-17

申请号：US11581178

申请日：2006-10-13

申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.

摘要翻译： 提供具有高击穿电压和低导通电阻的半导体器件。 一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。 在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。 场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。 晶体管的源极和漏极区位于高压P阱和高压N阱中。 可选地，在场电介质下的N阱区域中形成P场环。 在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

公开(公告)号：US07915677B2

公开(公告)日：2011-03-29

申请号：US12329285

申请日：2008-12-05

申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

IPC分类号： H01L29/78

摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.

公开(公告)号：US20090085101A1

公开(公告)日：2009-04-02

申请号：US12329285

申请日：2008-12-05

申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.

摘要翻译： 提供具有高击穿电压和低导通电阻的半导体器件。 一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。 在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。 场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。 晶体管的源极和漏极区位于高压P阱和高压N阱中。 可选地，在场电介质下的N阱区域中形成P场环。 在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

公开(公告)号：US07476591B2

公开(公告)日：2009-01-13

申请号：US11581178

申请日：2006-10-13

申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu

IPC分类号： H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.

摘要翻译： 提供具有高击穿电压和低导通电阻的半导体器件。 一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。 在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。 场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。 晶体管的源极和漏极区位于高压P阱和高压N阱中。 可选地，在场电介质下的N阱区域中形成P场环。 在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

公开(公告)号：US07521741B2

公开(公告)日：2009-04-21

申请号：US11593424

申请日：2006-11-06

申请人： Yu-Chang Jong ,  Ruey-Hsin Liu ,  Yueh-Chiou Lin ,  Shun-Liang Hsu ,  Chi-Hsuen Chang ,  Te-Yin Hsia

发明人： Yu-Chang Jong ,  Ruey-Hsin Liu ,  Yueh-Chiou Lin ,  Shun-Liang Hsu ,  Chi-Hsuen Chang ,  Te-Yin Hsia

IPC分类号： H01L29/76

CPC分类号： H01L29/7834 ,  H01L29/0653 ,  H01L29/0692

摘要： A high-voltage MOS device includes a first high-voltage well (HVW) region overlying a substrate, a second HVW region overlying the substrate, a third HVW region of an opposite conductivity type as that of the first and the second HVW regions overlying the substrate, wherein the HVPW region has at least a portion between the first HVNW region and the second HVNW region, an insulation region in the first HVNW region, the second HVNW region, and the HVPW region, a gate dielectric over and extending from the first HVNW region to the second HVNW region, a gate electrode on the gate dielectric, and a shielding pattern electrically insulated from the gate electrode over the insulation region. Preferably, the gate electrode and the shielding pattern have a spacing of less than about 0.4 μm. The shielding pattern is preferably connected to a voltage lower than a stress voltage applied on the gate electrode.

摘要翻译： 高压MOS器件包括覆盖衬底的第一高电压阱（HVW）区域，覆盖衬底的第二HVW区域，与覆盖衬底的第一和第二HVW区域相反的导电类型的第三HVW区域 基板，其中所述HVPW区域具有在所述第一HVNW区域和所述第二HVNW区域之间的至少一部分，所述第一HVNW区域中的绝缘区域，所述第二HVNW区域和所述HVPW区域，在所述第一HVNW区域和所述第二HVNW区域之间延伸的栅极电介质 HVNW区域到第二HVNW区域，栅极电介质上的栅极电极以及在绝缘区域上与栅电极电绝缘的屏蔽图案。 优选地，栅电极和屏蔽图案具有小于约0.4μm的间隔。 屏蔽图案优选地连接到低于施加在栅电极上的应力电压的电压。