发明申请
US20090011366A1 PATTERN FORMING METHOD, RESIST COMPOSITION TO BE USED IN THE PATTERN FORMING METHOD, NEGATIVE DEVELOPING SOLUTION TO BE USED IN THE PATTERN FORMING METHOD AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT TO BE USED IN THE PATTERN FORMING METHOD
有权
图案形成方法，用于图案形成方法的抗蚀组合物，用于图案形成方法的阴极开发解决方案和用于图案形成方法的负面开发的冲洗解决方案
- 专利标题： PATTERN FORMING METHOD, RESIST COMPOSITION TO BE USED IN THE PATTERN FORMING METHOD, NEGATIVE DEVELOPING SOLUTION TO BE USED IN THE PATTERN FORMING METHOD AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT TO BE USED IN THE PATTERN FORMING METHOD
- 专利标题（中）： 图案形成方法，用于图案形成方法的抗蚀组合物，用于图案形成方法的阴极开发解决方案和用于图案形成方法的负面开发的冲洗解决方案
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申请号： US12145151申请日： 2008-06-24
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公开(公告)号： US20090011366A1公开(公告)日： 2009-01-08
- 发明人: Hideaki TSUBAKI , Shinji Tarutani , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
- 申请人： Hideaki TSUBAKI , Shinji Tarutani , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM Corporation
- 当前专利权人： FUJIFILM Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-105910 20070413; JP2007-197838 20070730
- 主分类号： G03C1/053
- IPC分类号： G03C1/053 ; G03F7/20
摘要：
A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
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