发明申请
- 专利标题: METHOD FOR MAKING A TRANSISTOR WITH A STRESSOR
- 专利标题(中): 制造带有压力器的晶体管的方法
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申请号: US11835547申请日: 2007-08-08
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公开(公告)号: US20090042351A1公开(公告)日: 2009-02-12
- 发明人: Xiangzheng Bo , Venkat R. Kolagunta , Konstantin V. Loiko
- 申请人: Xiangzheng Bo , Venkat R. Kolagunta , Konstantin V. Loiko
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A method for forming a semiconductor device on a semiconductor material layer includes forming a gate structure over the semiconductor material layer. The method further includes forming a first nitride spacer adjacent to the gate structure and forming source/drain extensions in the semiconductor material layer. The method further includes forming an oxide liner overlying the gate structure and the source/drain extensions. The method further includes forming a second nitride spacer adjacent to the oxide liner. The method further includes forming source/drain regions in the semiconductor material layer. The method further includes using an etching process that is selective to the oxide liner, removing the second nitride spacer. The method further includes using an etching process that is selective to the first nitride spacer, at least partially removing the oxide liner. The method further includes forming silicide regions overlying the source/drain regions and the gate structure.
公开/授权文献
- US07799650B2 Method for making a transistor with a stressor 公开/授权日:2010-09-21