发明申请
- 专利标题: Nonvolatile memory device and method of fabricating the same
- 专利标题(中): 非易失性存储器件及其制造方法
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申请号: US12219465申请日: 2008-07-23
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公开(公告)号: US20090045455A1公开(公告)日: 2009-02-19
- 发明人: Kwang-soo Seol , Sang-jin Park , Sang-moo Choi , Hyo-sug Lee , Jung-hun Sung
- 申请人: Kwang-soo Seol , Sang-jin Park , Sang-moo Choi , Hyo-sug Lee , Jung-hun Sung
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2007-0081459 20070813
- 主分类号: H01L29/792
- IPC分类号: H01L29/792 ; H01L21/28
摘要:
Example embodiments relate to nonvolatile semiconductor memory devices using an electric charge storing layer as a storage node and fabrication methods thereof. An electric charge trap type nonvolatile memory device may include a tunneling film, an electric charge storing layer, a blocking insulation film, and a gate electrode. The blocking insulation film may be an aluminum oxide having an energy band gap larger than that of a γ-phase aluminum oxide film. An α-phase crystalline aluminum oxide film as a blocking insulation film may have an energy band gap of about 7.0 eV or more along with fewer defects. The crystalline aluminum oxide film may be formed by providing a source film (e.g., AlF3 film) on or within a preliminary blocking insulation film (e.g., amorphous aluminum oxide film) and performing a heat treatment. Alternatively, an aluminum compound (e.g., AlF3) may be introduced into the preliminary blocking insulation film by other diffusion methods or ion implantation. Accordingly, the ability of the memory device to maintain electric charges may be improved, the operating voltage for programming and erasing may be lowered, and the operating speed may be increased.