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发明申请
US20090050020A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME 有权
抗静电膜的组合物及其生产方法

COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME
摘要：
A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a  (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
摘要（中）：

提供了抗蚀剂下层膜用组合物。 该组合物具有优异的储存稳定性，并且可以形成对抗蚀剂膜具有优异粘附性的抗蚀剂下层膜，可以提高抗蚀剂图案的再现性，并且耐除去抗蚀剂期间用于显影的碱性液体和氧气灰化。 组合物包含下式（A）的硅烷化合物的水解产物和/或缩合物，<？在线式描述=“在线式”末端=“铅”→> R1bR2cSi（OR3）4- a（A）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R1是具有至少一个不饱和键的一价有机基团，R2各自表示氢原子，卤素原子 或一价有机基团，R 3分别表示一价有机基团，R 1为除OR 3以外的基团，a为1〜3的整数，b为1〜3的整数，c为0〜2的整数， 条件是a = b + c。

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