Composition for resist underlayer film and process for producing same
    1.
    发明授权
    Composition for resist underlayer film and process for producing same 有权
    抗蚀剂下层膜的组合物及其制造方法

    公开(公告)号:US08808446B2

    公开(公告)日:2014-08-19

    申请号:US11816642

    申请日:2006-02-24

    摘要: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a  (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

    摘要翻译: 提供了抗蚀剂下层膜用组合物。 该组合物具有优异的储存稳定性,并且可以形成对抗蚀剂膜具有优异粘附性的抗蚀剂下层膜,可以提高抗蚀剂图案的再现性,并且耐除去抗蚀剂期间用于显影的碱性液体和氧气灰化。 该组合物包含下式(A)的硅烷化合物的水解产物和/或缩合物,其中R1是具有至少一个不饱和键的一价有机基团的R 1 b R 2 c Si(OR 3)4-a(A),R 2各自表示 氢原子,卤原子或一价有机基团,R 3分别表示一价有机基团,R 1为除OR 3以外的基团,a为1〜3的整数,b为1〜3的整数,c为 0〜2的整数,条件是a = b + c。

    COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME
    2.
    发明申请
    COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME 有权
    抗静电膜的组合物及其生产方法

    公开(公告)号:US20100151384A1

    公开(公告)日:2010-06-17

    申请号:US12715406

    申请日:2010-03-02

    IPC分类号: G03F7/075 C07F7/08

    摘要: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi (OR3)4-a  (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

    摘要翻译: 提供了抗蚀剂下层膜用组合物。 该组合物具有优异的储存稳定性,并且可以形成对抗蚀剂膜具有优异粘合性的抗蚀剂下层膜,可以提高抗蚀剂图案的再现性,并且耐显影用碱性液体和除去抗蚀剂期间的氧气需求。 该组合物包含下式(A)的硅烷化合物的水解产物和/或缩合物,其中R1是具有至少一个不饱和键的一价有机基团的R 1 b R 2 c Si(OR 3)4-a(A),R 2各自表示 氢原子,卤原子或一价有机基团,R 3分别表示一价有机基团,R 1为除OR 3以外的基团,a为1〜3的整数,b为1〜3的整数,c为 0〜2的整数,条件是a = b + c。

    COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME
    3.
    发明申请
    COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME 有权
    抗静电膜的组合物及其生产方法

    公开(公告)号:US20090050020A1

    公开(公告)日:2009-02-26

    申请号:US11816642

    申请日:2006-02-24

    IPC分类号: C09D4/00

    摘要: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a  (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

    摘要翻译: 提供了抗蚀剂下层膜用组合物。 该组合物具有优异的储存稳定性,并且可以形成对抗蚀剂膜具有优异粘附性的抗蚀剂下层膜,可以提高抗蚀剂图案的再现性,并且耐除去抗蚀剂期间用于显影的碱性液体和氧气灰化。 组合物包含下式(A)的硅烷化合物的水解产物和/或缩合物,<?在线式描述=“在线式”末端=“铅”→> R1bR2cSi(OR3)4- a(A)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中R1是具有至少一个不饱和键的一价有机基团,R2各自表示氢原子,卤素原子 或一价有机基团,R 3分别表示一价有机基团,R 1为除OR 3以外的基团,a为1〜3的整数,b为1〜3的整数,c为0〜2的整数, 条件是a = b + c。

    Composition for resist underlayer film and process for producing same
    4.
    发明授权
    Composition for resist underlayer film and process for producing same 有权
    抗蚀剂下层膜的组合物及其制造方法

    公开(公告)号:US08968458B2

    公开(公告)日:2015-03-03

    申请号:US12715406

    申请日:2010-03-02

    摘要: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a  (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

    摘要翻译: 提供了抗蚀剂下层膜用组合物。 该组合物具有优异的储存稳定性,并且可以形成对抗蚀剂膜具有优异粘合性的抗蚀剂下层膜,可以提高抗蚀剂图案的再现性,并且耐显影用碱性液体和除去抗蚀剂期间的氧气需求。 该组合物包含下式(A)的硅烷化合物的水解产物和/或缩合物,其中R1是具有至少一个不饱和键的一价有机基团的R 1 b R 2 c Si(OR 3)4-a(A),R 2各自表示 氢原子,卤原子或一价有机基团,R 3分别表示一价有机基团,R 1为除OR 3以外的基团,a为1〜3的整数,b为1〜3的整数,c为 0〜2的整数,条件是a = b + c。