发明申请
- 专利标题： High-output diamond semiconductor element
- 专利标题（中）： 高输出金刚石半导体元件
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申请号： US12153752申请日： 2008-05-23
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公开(公告)号： US20090050899A1公开(公告)日： 2009-02-26
- 发明人: Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata , Ramanujam Kumaresan , Natsuo Tatsumi
- 申请人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata , Ramanujam Kumaresan , Natsuo Tatsumi
- 专利权人： National Institute of Advanced Industrial Scinece and Technology
- 当前专利权人： National Institute of Advanced Industrial Scinece and Technology
- 优先权： JPP.2007-217412 20070823; JPP.2007-251370 20070927
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
The present invention relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, and an insulating film layer disposed to surround a circumference of the Schottky electrode. It also relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, a dielectric layer disposed on a part of a junction surface of the Schottky electrode and the diamond p− drift layer, and a field plate containing a conductor, the field plate being disposed on an external surface of the dielectric layer to surround a circumference of the Schottky electrode.
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