公开(公告)号：US07710013B2

公开(公告)日：2010-05-04

申请号：US11889389

申请日：2007-08-13

申请人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01J63/02 ,  H01J1/3044 ,  H01J1/308

摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

摘要翻译： 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US20080116446A1

公开(公告)日：2008-05-22

申请号：US11883323

申请日：2006-09-21

申请人： Yoshiyuki Yamamoto ,  Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01L21/00 ,  H01L29/06

CPC分类号： H01J1/3044 ,  H01J9/025

摘要： An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 μA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.

摘要翻译： 电子发射器件2包括由金刚石制成的电子发射部分6。 在电子发射电流值为10μA以上的情况下，电子发射器件2中电子发射电流值超过1小时的偏差在±20％以内。改变电子发射电流值的阶梯状噪声的发生次数 每10分钟一步或一次。

公开(公告)号：US20060244352A1

公开(公告)日：2006-11-02

申请号：US10554188

申请日：2004-09-15

申请人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/00

CPC分类号： H01J1/304 ,  H01J1/308 ,  H01J2237/06325 ,  H01J2237/3175

摘要： An electron emission device which is smaller, able to operate at lower voltage and more efficient than the conventional device is provided. The device contains a light emitting device to irradiate light to a cathode wherein at least an electron emission face of the cathode is made of diamond. By composing the device in such a way, the voltage to draw out electrons can be lowered with a wide margin compared to the conventional device, and thus a small device which can be operated with low voltage may be obtained. The light emitting device can be formed as one unit with the cathode and it can also be that the light emitting device and the electrode are made of diamond. Furthermore, the electron emission face of the cathode is preferably an n- or p-type diamond semiconductor.

摘要翻译： 提供一种较小的电子发射装置，其能够以比常规装置更低的电压工作和更有效率。 该装置包括用于将光照射到阴极的发光装置，其中至少阴极的电子发射面由金刚石制成。 通过以这种方式组装器件，与传统器件相比，可以大幅度地降低引出电子的电压，因此可以获得可以以低电压操作的小器件。 发光器件可以与阴极形成一个单元，并且发光器件和电极也可以由金刚石制成。 此外，阴极的电子发射面优选为n型或p型金刚石半导体。

公开(公告)号：US20090050899A1

公开(公告)日：2009-02-26

申请号：US12153752

申请日：2008-05-23

申请人： Kazuhiro Ikeda ,  Hitoshi Umezawa ,  Shinichi Shikata ,  Ramanujam Kumaresan ,  Natsuo Tatsumi

发明人： Kazuhiro Ikeda ,  Hitoshi Umezawa ,  Shinichi Shikata ,  Ramanujam Kumaresan ,  Natsuo Tatsumi

IPC分类号： H01L29/15

CPC分类号： H01L29/872 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/1602 ,  H01L29/402 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2924/00

摘要： The present invention relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, and an insulating film layer disposed to surround a circumference of the Schottky electrode. It also relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, a dielectric layer disposed on a part of a junction surface of the Schottky electrode and the diamond p− drift layer, and a field plate containing a conductor, the field plate being disposed on an external surface of the dielectric layer to surround a circumference of the Schottky electrode.

摘要翻译： 本发明涉及一种高输出金刚石半导体元件，其包括作为阴极的肖特基电极，金刚石P漂移层，金刚石p +欧姆层，作为阳极的欧姆电极和设置成围绕 肖特基电极的周长。 它还涉及一种高输出金刚石半导体元件，其包括作为阴极的肖特基电极，金刚石P-漂移层，金刚石p +欧姆层，作为阳极的欧姆电极，设置在结的一部分上的电介质层 肖特基电极和金刚石p-漂移层的表面和包含导体的场板，场板设置在电介质层的外表面上以围绕肖特基电极的周围。

公开(公告)号：US07432521B2

公开(公告)日：2008-10-07

申请号：US10526471

申请日：2004-03-05

申请人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai ,  Tsuneo Nakahara

发明人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai ,  Tsuneo Nakahara

IPC分类号： H01L29/06

CPC分类号： H03K19/06 ,  H01J19/24 ,  H01J21/20 ,  H03K19/08

摘要： A logical operation element and logical operation circuit are provided that are capable of high speed and a high degree of integration.A logical operation circuit has a construction wherein, in a logical operation element, the anodes of first and second field emission type microfabricated electron emitters are put at the same potential and two or more signal voltages are input to gate electrodes corresponding to these emitters. A NOR element so arranged that when a high potential input signal is input to either of the two lines, electron emission occurs from the emitters and the potential of said anodes is lowered, and a NAND element wherein the cathodes of the first and second field emission type microfabricated electron emitters are connected in series, two signal voltages are applied to the gate electrodes corresponding to the first and second emitter and the anode potential of the second emitter is lowered when the two input signals are high potential are employed.

摘要翻译： 提供了能够高速度和高集成度的逻辑运算元件和逻辑运算电路。 逻辑运算电路具有这样的结构，其中在逻辑运算元件中，将第一和第二场致发射型微细加电子发射体的阳极置于相同的电位，并将两个或更多个信号电压输入到对应于这些发射极的栅电极。 一种NOR元件，其被布置成当高电位输入信号被输入到两条线中的任一条时，从发射极发生电子发射，并且所述阳极的电位降低;以及NAND元件，其中第一和第二场致发射的阴极 类型的微制造电子发射体串联连接时，两个信号电压施加到对应于第一和第二发射极的栅电极，并且当采用两个输入信号为高电位时，第二发射极的阳极电位降低。

公开(公告)号：US06794683B2

公开(公告)日：2004-09-21

申请号：US10362890

申请日：2003-02-23

申请人： Natsuo Tatsumi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Takahiro Imai

IPC分类号： H01L2904

CPC分类号： C23C14/165 ,  C23C14/325 ,  H01L41/081 ,  H01L41/1873 ,  H01L41/316 ,  H03H3/08 ,  H03H9/02582

摘要： Further improvements in circuit-element performance of surface-acoustic wave devices are anticipated by being able to produce a diamond substrate on which is formed a Li(NbxTa1−x)O3 (wherein 0≦x≦1) thin film whose c-axis orientation is favorable and whose piezoelectric characteristics are satisfactory. A diamond substrate on which a highly c-axis oriented, piezoelectrically satisfactory Li(NbxTa1−x)O3 (wherein 0≦x≦1) thin film is formed can be obtained by using a laser ablation technique to form a Li(NbxTa1−x)O3 (wherein 0≦x≦1) thin film onto a (110)-oriented gas-phase synthesized polycrystalline diamond substrate, that is superficially mirror-surface processed. By utilizing a diamond substrate on which a piezoelectric-substance thin film is formed, surface-acoustic wave devices having high propagation speeds can be offered.

摘要翻译： 表面声波器件的电路元件性能的进一步改进可以通过能够制造金刚石基片而形成Li（Nb x Ti a-x）O 3（其中0 <= x <= 1）薄膜，其中c- 轴方向是有利的，其压电特性令人满意。 通过使用激光烧蚀技术可以获得其上形成高度c轴取向的，压电令人满意的Li（Nb x Ti a-x）O 3（其中0 <= x <= 1））薄膜的金刚石基底，以形成Li（Nb x Ti a-x） -x）O3（其中0 <= x <= 1）薄膜到（110）取向的气相合成多晶金刚石基底上，其表面经镜面加工。 通过利用其上形成有压电物质薄膜的金刚石基板，可以提供具有高传播速度的表面声波装置。

公开(公告)号：US06710513B2

公开(公告)日：2004-03-23

申请号：US10203423

申请日：2002-08-08

申请人： Hideaki Nakahata ,  Akihiro Hachigo ,  Natsuo Tatsumi ,  Takahiro Imai ,  Shinichi Shikata

发明人： Hideaki Nakahata ,  Akihiro Hachigo ,  Natsuo Tatsumi ,  Takahiro Imai ,  Shinichi Shikata

IPC分类号： H03H925

CPC分类号： H03H9/02582 ,  H03H9/02574

摘要： Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer. A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.

摘要翻译： 提供一种用于控制压电层的晶体特性的中间层不容易与金刚石层分离的表面声波器件和表面声波器件的基板。表面声波器件 根据本发明的衬底20和表面声波器件10包括金刚石层22，设置在金刚石层22上的中间层24和设置在中间层24上的压电层26，压电层 26由LiNbO 3或LiTaO 3制成，中间层24由AlN制成。

公开(公告)号：US09403215B2

公开(公告)日：2016-08-02

申请号：US14111289

申请日：2012-04-10

申请人： Natsuo Tatsumi ,  Katsuko Yamamoto ,  Hitoshi Sumiya

发明人： Natsuo Tatsumi ,  Katsuko Yamamoto ,  Hitoshi Sumiya

IPC分类号： B23B27/14 ,  B23B27/20 ,  C04B35/52 ,  C04B35/5831 ,  C04B35/645 ,  B82Y30/00

CPC分类号： B23B27/20 ,  B23B27/141 ,  B23B2226/125 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/5831 ,  C04B35/645 ,  C04B2235/421 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6567 ,  C04B2235/666 ,  C04B2235/781 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2235/81 ,  C04B2235/87 ,  Y10T407/26 ,  Y10T407/27

摘要： The present invention provides a cutting tool that achieves cutting with high precision. The cutting tool of the present invention includes a cutting edge composed of a polycrystalline body including high-pressure-phase hard grains that contain one or more elements selected from the group consisting of boron, carbon, and nitrogen, the polycrystalline body being formed by subjecting a non-diamond carbon material and/or boron nitride, serving as a starting material, to direct conversion sintering under ultra-high pressure and high temperature without adding a sintering aid or a catalyst, in which letting the radius of curvature of the nose of the cutting edge of the cutting tool be R1, the sintered grains constituting the polycrystalline body have an average grain size of 1.2×R1 or less and a maximum grain size of 2×R1 or less.

摘要翻译： 本发明提供一种以高精度实现切割的切削工具。 本发明的切削工具包括由包含高压相硬质粒子的多晶体构成的切削刃，所述高压相硬质粒子含有选自硼，碳和氮的一种以上的元素，所述多晶体通过 作为起始原料的非金刚石碳材料和/或氮化硼，在超高压和高温下直接转化烧结，而不添加烧结助剂或催化剂，其中使得鼻子的曲率半径 切削刀具的切削刃为R1，构成多晶体的烧结晶粒的平均粒径为1.2×R1以下，最大粒径为2×R1以下。

公开(公告)号：US20080042144A1

公开(公告)日：2008-02-21

申请号：US11889389

申请日：2007-08-13

申请人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01L29/15

CPC分类号： H01J63/02 ,  H01J1/3044 ,  H01J1/308

摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

摘要翻译： 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的基板和设置在基板上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US07307377B2

公开(公告)日：2007-12-11

申请号：US10952477

申请日：2004-09-29

申请人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/02

CPC分类号： H01J63/02 ,  H01J1/3044 ,  H01J1/308

摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

摘要翻译： 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。