公开(公告)号：US20090050899A1

公开(公告)日：2009-02-26

申请号：US12153752

申请日：2008-05-23

申请人： Kazuhiro Ikeda ,  Hitoshi Umezawa ,  Shinichi Shikata ,  Ramanujam Kumaresan ,  Natsuo Tatsumi

发明人： Kazuhiro Ikeda ,  Hitoshi Umezawa ,  Shinichi Shikata ,  Ramanujam Kumaresan ,  Natsuo Tatsumi

IPC分类号： H01L29/15

CPC分类号： H01L29/872 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/1602 ,  H01L29/402 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2924/00

摘要： The present invention relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, and an insulating film layer disposed to surround a circumference of the Schottky electrode. It also relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, a dielectric layer disposed on a part of a junction surface of the Schottky electrode and the diamond p− drift layer, and a field plate containing a conductor, the field plate being disposed on an external surface of the dielectric layer to surround a circumference of the Schottky electrode.

摘要翻译： 本发明涉及一种高输出金刚石半导体元件，其包括作为阴极的肖特基电极，金刚石P漂移层，金刚石p +欧姆层，作为阳极的欧姆电极和设置成围绕 肖特基电极的周长。 它还涉及一种高输出金刚石半导体元件，其包括作为阴极的肖特基电极，金刚石P-漂移层，金刚石p +欧姆层，作为阳极的欧姆电极，设置在结的一部分上的电介质层 肖特基电极和金刚石p-漂移层的表面和包含导体的场板，场板设置在电介质层的外表面上以围绕肖特基电极的周围。