发明申请
- 专利标题: Nanoscale wires and related devices
- 专利标题(中): 纳米线及相关设备
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申请号: US12072844申请日: 2008-02-27
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公开(公告)号: US20090057650A1公开(公告)日: 2009-03-05
- 发明人: Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
- 申请人: Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
- 申请人地址: US MA Cambridge
- 专利权人: President and Fellows of Harvard College
- 当前专利权人: President and Fellows of Harvard College
- 当前专利权人地址: US MA Cambridge
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.