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公开(公告)号：US20100155698A1
公开(公告)日：2010-06-24
申请号：US12459177
申请日：2009-06-26
申请人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
发明人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
CPC分类号： C30B29/60 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4146 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/73 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L33/20 , H01L51/0048
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
摘要翻译： 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。
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公开(公告)号：US20090057650A1
公开(公告)日：2009-03-05
申请号：US12072844
申请日：2008-02-27
申请人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
发明人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
IPC分类号： H01L29/66
CPC分类号： C30B29/60 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4146 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/73 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L33/20 , H01L51/0048
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
摘要翻译： 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。
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公开(公告)号：US07301199B2
公开(公告)日：2007-11-27
申请号：US10196337
申请日：2002-07-16
申请人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
发明人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
CPC分类号： G11C13/025 , B82Y10/00 , B82Y15/00 , B82Y30/00 , C30B11/00 , C30B25/00 , C30B25/005 , C30B29/60 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C11/56 , G11C13/0014 , G11C13/0019 , G11C13/04 , G11C2213/17 , G11C2213/18 , G11C2213/77 , G11C2213/81 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02557 , H01L21/0256 , H01L21/02603 , H01L21/02617 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L27/092 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/1606 , H01L29/2003 , H01L29/207 , H01L29/267 , H01L29/73 , H01L29/7781 , H01L29/78696 , H01L29/861 , H01L29/868 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L51/0048 , H01L51/0595 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , Y02E10/549 , Y10S977/936 , Y10S977/938 , Y10S977/958 , Y10T428/2929 , Y10T428/298 , H01L2924/00
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
摘要翻译： 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。
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公开(公告)号：US20060175601A1
公开(公告)日：2006-08-10
申请号：US11172408
申请日：2005-06-30
申请人： Charles Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David Smith , Deli Wang , Zhaohui Zhong
发明人： Charles Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David Smith , Deli Wang , Zhaohui Zhong
IPC分类号： H01L31/109
CPC分类号： C30B29/60 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4146 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/73 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L33/20 , H01L51/0048
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
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公开(公告)号：US20070281156A1
公开(公告)日：2007-12-06
申请号：US11386080
申请日：2006-03-21
申请人： Charles Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David Smith , Deli Wang , Zhaohui Zhong
发明人： Charles Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David Smith , Deli Wang , Zhaohui Zhong
IPC分类号： D02G3/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y15/00 , B82Y30/00 , C30B11/00 , C30B25/00 , C30B25/005 , C30B29/60 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C11/56 , G11C13/0014 , G11C13/0019 , G11C13/04 , G11C2213/17 , G11C2213/18 , G11C2213/77 , G11C2213/81 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02557 , H01L21/0256 , H01L21/02603 , H01L21/02617 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L27/092 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/1606 , H01L29/2003 , H01L29/207 , H01L29/267 , H01L29/73 , H01L29/7781 , H01L29/78696 , H01L29/861 , H01L29/868 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L51/0048 , H01L51/0595 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , Y02E10/549 , Y10S977/936 , Y10S977/938 , Y10S977/958 , Y10T428/2929 , Y10T428/298 , H01L2924/00
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
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