发明申请
- 专利标题： Semiconductor Device and Process for Production Thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12193900申请日： 2008-08-19
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公开(公告)号： US20090057670A1公开(公告)日： 2009-03-05
- 发明人: Shunpei Yamazaki , Jun Koyama , Hiroshi Shibata , Takeshi Fukunaga
- 申请人： Shunpei Yamazaki , Jun Koyama , Hiroshi Shibata , Takeshi Fukunaga
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 优先权： JP11-013275 19990121
- 主分类号： H01L21/77
- IPC分类号： H01L21/77 ; H01L27/088
摘要：
Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
公开/授权文献
- US07727836B2 Semiconductor device and process for production thereof 公开/授权日：2010-06-01
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