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公开(公告)号：US20090057670A1
公开(公告)日：2009-03-05
申请号：US12193900
申请日：2008-08-19
IPC分类号： H01L21/77 , H01L27/088
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F1/1368 , G02F2001/136245 , H01L27/1237 , H01L27/1255 , H01L27/3244 , H01L29/78633 , H01L29/78645
摘要： Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
摘要翻译： 本文公开了一种具有高可靠性的半导体器件，其具有根据所需电路性能布置的适当结构的TFT。 半导体在同一衬底上具有驱动电路和像素部分。 其特征在于，在与遮光膜形成在同一层上的第一电极和由与漏区相同组成的半导体膜形成的第二电极之间形成存储电容，并且去除第一基底绝缘膜 在存储电容的一部分处，使得第二基极绝缘膜用作存储电容的电介质。 该结构在小面积上提供了大的存储电容。
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2.发明申请Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor 有权具有包括像素TFT和存储电容器的像素矩阵电路的半导体器件公开(公告)号：US20080035927A1
公开(公告)日：2008-02-14
申请号：US11878959
申请日：2007-07-30
申请人： Shunpei Yamazaki , Yu Yamazaki , Jun Koyama , Takayuki Ikeda , Hiroshi Shibata , Hidehito Kitakado , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Yu Yamazaki , Jun Koyama , Takayuki Ikeda , Hiroshi Shibata , Hidehito Kitakado , Takeshi Fukunaga
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , G02F1/136213 , H01L27/1255 , H01L29/78645
摘要： In a CMOS circuit formed on a substrate 100, a subordinate gate wiring line (a first wiring line) 102a and main gate wiring line (a second wiring line) 113a are provided in an n-channel TFT. The LDD regions 107a and 107b overlap the first wiring line 102a and not overlap the second wiring line 113a. Thus, applying a gate voltage to the first wiring line forms the GOLD structure, while not applying forms the LLD structure. In this way, the GOLD structure and the LLD structure can be used appropriately in accordance with the respective specifications required for the circuits.
摘要翻译： 在基板100上形成的CMOS电路中，在n沟道TFT中设置有从属栅极布线（第1布线）102a和主栅极布线（第2布线）113a。 LDD区域107a和107b与第一布线102a重叠，而不与第二布线113a重叠。 因此，向第一布线施加栅极电压形成GOLD结构，而不施加形成LLD结构。 以这种方式，可以根据电路所需的相应规格适当地使用GOLD结构和LLD结构。
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公开(公告)号：US07208766B2
公开(公告)日：2007-04-24
申请号：US11120175
申请日：2005-05-02
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F1/1368 , G02F2001/136245 , H01L27/1237 , H01L27/1255 , H01L27/3244 , H01L29/78633 , H01L29/78645
摘要： Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
摘要翻译： 本文公开了一种具有高可靠性的半导体器件，其具有根据所需电路性能布置的适当结构的TFT。 半导体在同一衬底上具有驱动电路和像素部分。 其特征在于，在与遮光膜形成在同一层上的第一电极和由与漏区相同组成的半导体膜形成的第二电极之间形成存储电容，并且去除第一基底绝缘膜 在存储电容的一部分处，使得第二基极绝缘膜用作存储电容的电介质。 该结构在小面积上提供了大的存储电容。
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公开(公告)号：US20050253149A1
公开(公告)日：2005-11-17
申请号：US11120175
申请日：2005-05-02
IPC分类号： H01L29/786 , G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/32 , H01L29/04
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F1/1368 , G02F2001/136245 , H01L27/1237 , H01L27/1255 , H01L27/3244 , H01L29/78633 , H01L29/78645
摘要： Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
摘要翻译： 本文公开了一种具有高可靠性的半导体器件，其具有根据所需电路性能布置的适当结构的TFT。 半导体在同一衬底上具有驱动电路和像素部分。 其特征在于，在与遮光膜形成在同一层上的第一电极和由与漏区相同组成的半导体膜形成的第二电极之间形成存储电容，并且去除第一基底绝缘膜 在存储电容的一部分处，使得第二基极绝缘膜用作存储电容的电介质。 该结构在小面积上提供了大的存储电容。
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公开(公告)号：US20050253148A1
公开(公告)日：2005-11-17
申请号：US11120172
申请日：2005-05-02
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/04 , H01L29/423 , H01L29/786
CPC分类号： H01L29/42384 , G02F1/13454 , H01L27/1237 , H01L27/1255 , H01L27/1277 , H01L29/78645
摘要： A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.
摘要翻译： 提供了具有高可靠性的半导体器件，其中布置了用于电路功能的具有适当结构的TFT。 驱动TFT的栅极绝缘膜（115）和（116）被设计为比具有驱动电路的半导体器件中的像素TFT的栅极绝缘膜（117）更薄，并且在相同的基板上具有像素部分。 此外，驱动TFT的栅极绝缘膜（115）和（116）和存储电容器的电介质（118）同时形成，使得电介质（118）可能非常薄，并且大 容量可以保证。
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公开(公告)号：US06278131B1
公开(公告)日：2001-08-21
申请号：US09477865
申请日：2000-01-05
IPC分类号： H01L2900
CPC分类号： H01L29/42384 , G02F1/13454 , H01L27/1237 , H01L27/1255 , H01L27/1277 , H01L29/78645
摘要： A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.
摘要翻译： 提供了具有高可靠性的半导体器件，其中布置了用于电路功能的具有适当结构的TFT。 驱动TFT的栅极绝缘膜（115）和（116）被设计为比具有驱动电路的半导体器件中的像素TFT的栅极绝缘膜（117）更薄，并且在相同的基板上具有像素部分。 此外，驱动TFT的栅极绝缘膜（115）和（116）和存储电容器的电介质（118）同时形成，使得电介质（118）可能非常薄，并且大 容量可以保证。
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7.发明授权Semiconductor device including a thin film transistor and a storage capacitor 有权包括薄膜晶体管和存储电容器的半导体器件公开(公告)号：US07473968B2
公开(公告)日：2009-01-06
申请号：US11120172
申请日：2005-05-02
IPC分类号： H01L29/78
CPC分类号： H01L29/42384 , G02F1/13454 , H01L27/1237 , H01L27/1255 , H01L27/1277 , H01L29/78645
摘要： A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.
摘要翻译： 提供了具有高可靠性的半导体器件，其中布置了用于电路功能的具有适当结构的TFT。 驱动TFT的栅极绝缘膜（115）和（116）被设计为比具有驱动电路的半导体器件中的像素TFT的栅极绝缘膜（117）更薄，并且在相同的基板上具有像素部分。 此外，驱动TFT的栅极绝缘膜（115）和（116）和存储电容器的电介质（118）同时形成，使得电介质（118）可能非常薄，并且大 容量可以保证。
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公开(公告)号：US07414267B2
公开(公告)日：2008-08-19
申请号：US11738599
申请日：2007-04-23
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F1/1368 , G02F2001/136245 , H01L27/1237 , H01L27/1255 , H01L27/3244 , H01L29/78633 , H01L29/78645
摘要： Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
摘要翻译： 本文公开了一种具有高可靠性的半导体器件，其具有根据所需电路性能布置的适当结构的TFT。 半导体在同一衬底上具有驱动电路和像素部分。 其特征在于，在与遮光膜形成在同一层上的第一电极和由与漏区相同组成的半导体膜形成的第二电极之间形成存储电容，并且去除第一基底绝缘膜 在存储电容的一部分处，使得第二基极绝缘膜用作存储电容的电介质。 该结构在小面积上提供了大的存储电容。
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公开(公告)号：US06906347B2
公开(公告)日：2005-06-14
申请号：US09874670
申请日：2001-06-05
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/04 , H01L29/423 , H01L29/786 , G02F1/136
CPC分类号： H01L29/42384 , G02F1/13454 , H01L27/1237 , H01L27/1255 , H01L27/1277 , H01L29/78645
摘要： A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.
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公开(公告)号：US06890784B2
公开(公告)日：2005-05-10
申请号：US10453034
申请日：2003-06-03
IPC分类号： H01L29/786 , G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/32 , H01L29/04 , H01L21/00
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F1/1368 , G02F2001/136245 , H01L27/1237 , H01L27/1255 , H01L27/3244 , H01L29/78633 , H01L29/78645
摘要： Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
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