发明申请
- 专利标题： Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Luminescence Device
- 专利标题（中）： 半导体纳米颗粒嵌入式绝缘膜发光器件的制造
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申请号： US12267698申请日： 2008-11-10
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公开(公告)号： US20090058266A1公开(公告)日： 2009-03-05
- 发明人: Pooran Chandra Joshi , Hao Zhang , Jiandong Huang , Apostolos T. Voutsas
- 申请人： Pooran Chandra Joshi , Hao Zhang , Jiandong Huang , Apostolos T. Voutsas
- 主分类号： H01J1/63
- IPC分类号： H01J1/63 ; B05D5/12
摘要：
A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.
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