Invention Application
- Patent Title: SEMICONDUCTOR LIGHT EMITTING ELEMENT
- Patent Title (中): 半导体发光元件
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Application No.: US12039303Application Date: 2008-02-28
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Publication No.: US20090059986A1Publication Date: 2009-03-05
- Inventor: Koichi TACHIBANA , Shinji SAITO , Shinya NUNOUE , Haruhiko YOSHIDA
- Applicant: Koichi TACHIBANA , Shinji SAITO , Shinya NUNOUE , Haruhiko YOSHIDA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Priority: JP2007-226417 20070831
- Main IPC: H01S5/30
- IPC: H01S5/30

Abstract:
A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer implements a ridge extending in a predetermined direction; a pair of first current block layers provided on the second clad layer sandwiching the ridge along the extending direction; and a pair of second current block layers provided between the first current block layers on the second clad layer and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge, the second current block layers having a refractive index larger than the first current block layers at an emission peak wavelength of the active layer.
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