公开(公告)号：US20090059986A1

公开(公告)日：2009-03-05

申请号：US12039303

申请日：2008-02-28

申请人： Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

发明人： Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

IPC分类号： H01S5/30

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2218 ,  H01S2301/18

摘要： A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer implements a ridge extending in a predetermined direction; a pair of first current block layers provided on the second clad layer sandwiching the ridge along the extending direction; and a pair of second current block layers provided between the first current block layers on the second clad layer and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge, the second current block layers having a refractive index larger than the first current block layers at an emission peak wavelength of the active layer.

摘要翻译： 半导体发光元件包括设置在基板上的第一导电类型的第一覆盖层; 设置在所述第一包层上的有源层; 设置在所述有源层上的第二导电类型的第二覆盖层，所述第二覆层的上部实现沿预定方向延伸的脊; 一对第一电流阻挡层，设置在沿所述延伸方向夹着所述脊的所述第二覆层上; 以及一对第二电流阻挡层，设置在所述第二覆盖层上的所述第一电流阻挡层之间并且在所述脊的侧壁处与所述第一电流阻挡层接触，选择性地夹持包括所述脊的边缘的区域，所述第二电流 在有源层的发射峰值波长处具有大于第一电流阻挡层的折射率的阻挡层。

公开(公告)号：US20130087805A1

公开(公告)日：2013-04-11

申请号：US13404531

申请日：2012-02-24

申请人： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

发明人： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

IPC分类号： H01L29/20

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 发光层设置在n型层和p型层之间，并且包括交替层叠的多个势垒层和多个阱层。 在多个阻挡层中最靠近p型层的p侧阻挡层包括含有III族元素的第一层和第二层。 第二层的III族元素中的In组成比高于第一层的III族元素中的In组成比。 p侧层的平均In组成比高于多个势垒层中最靠近n型层的n侧阻挡层的平均In组成比。

公开(公告)号：US20120138896A1

公开(公告)日：2012-06-07

申请号：US13398239

申请日：2012-02-16

申请人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

发明人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

IPC分类号： H01L33/04

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

公开(公告)号：US20110204411A1

公开(公告)日：2011-08-25

申请号：US12875560

申请日：2010-09-03

申请人： Hajime NAGO ,  Koichi TACHIBANA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

发明人： Hajime NAGO ,  Koichi TACHIBANA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC分类号： H01L33/32 ,  H01L33/30

CPC分类号： H01L33/24 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

摘要： According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x

摘要翻译： 根据一个实施例，公开了用于在衬底的主表面上生长氮化物半导体的晶体的晶体生长方法。 主表面配有凹凸。 该方法可以包括以不大于0.1微米/小时的速率在主表面上沉积缓冲层。 缓冲层包括GaxAl1-xN（0.1＆nlE; x <0.5），并且具有不小于20纳米且不大于50纳米的厚度。 此外，该方法可以包括在沉积缓冲层时在高于衬底的温度的温度下在缓冲层上生长包括氮化物半导体的晶体。

公开(公告)号：US20100102296A1

公开(公告)日：2010-04-29

申请号：US12652827

申请日：2010-01-06

申请人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

发明人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US20110216798A1

公开(公告)日：2011-09-08

申请号：US12873821

申请日：2010-09-01

申请人： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

发明人： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

IPC分类号： H01S5/22 ,  H01S5/323 ,  H01L33/30

CPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/323

摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

摘要翻译： 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下 。

公开(公告)号：US20120012884A1

公开(公告)日：2012-01-19

申请号：US13165837

申请日：2011-06-22

申请人： Eiji MURAMOTO ,  Shinya NUNOUE

发明人： Eiji MURAMOTO ,  Shinya NUNOUE

IPC分类号： H01L33/62

CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic %; and an n-electrode formed on a second region of the n-type semiconductor layer.

摘要翻译： 根据实施例的半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上并且发射光的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p电极，并且包括氧含量低于40原子％的第一导电氧化物层; 以及形成在n型半导体层的第二区域上的n电极。

公开(公告)号：US20110147776A1

公开(公告)日：2011-06-23

申请号：US12874839

申请日：2010-09-02

申请人： Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

发明人： Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

IPC分类号： H01L33/58

CPC分类号： H01L33/504 ,  H01L24/29 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

摘要翻译： 根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。

公开(公告)号：US20130229106A1

公开(公告)日：2013-09-05

申请号：US13601433

申请日：2012-08-31

申请人： Iwao MITSUISHI ,  Naotoshi MATSUDA ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Aoi OKADA ,  Masahiro KATO ,  Ryosuke HIRAMATSU ,  Yasushi HATTORI ,  Shinya NUNOUE

发明人： Iwao MITSUISHI ,  Naotoshi MATSUDA ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Aoi OKADA ,  Masahiro KATO ,  Ryosuke HIRAMATSU ,  Yasushi HATTORI ,  Shinya NUNOUE

IPC分类号： C09K11/77 ,  H05B33/12

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H05B33/12 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd  formula 1 wherein x, a, b, c and d satisfy following condition: 0

摘要翻译： 根据一个实施例，当在具有250至520nm的波长范围内的发射峰的光激发时，发光材料发射具有在550至590nm的波长范围内的发光峰的光。 发光材料具有由下式1表示的组成。（Sr1-xEux）aSibAlOcNdformula 1其中x，a，b，c和d满足以下条件：0

公开(公告)号：US20120146045A1

公开(公告)日：2012-06-14

申请号：US13212539

申请日：2011-08-18

申请人： Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

发明人： Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

IPC分类号： H01L33/32

CPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction.

摘要翻译： 根据一个实施例，半导体发光器件包括发光层，透光层和第一半导体层。 透光层相对于从发光层发射的光是可透射的。 第一半导体层与发光层和透光层之间的透光层接触。 透光层的热膨胀系数大于透光层的热膨胀系数，其晶格常数小于有源层的晶格常数，并且在面内方向具有拉伸应力。