发明申请
- 专利标题： METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT
- 专利标题（中）： 用于制造磁性元件的方法和装置
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申请号： US12248578申请日： 2008-10-09
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公开(公告)号： US20090061105A1公开(公告)日： 2009-03-05
- 发明人: Hideaki FUKUZAWA , Katsuhiko Koui , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
- 申请人： Hideaki FUKUZAWA , Katsuhiko Koui , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
- 优先权： JP2004-233641 20040810
- 主分类号： B05D5/12
- IPC分类号： B05D5/12
摘要：
The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.