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公开(公告)号：US20060034022A1
公开(公告)日：2006-02-16
申请号：US11199448
申请日：2005-08-09
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
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2.发明授权公开(公告)号：US06495275B2
公开(公告)日：2002-12-17
申请号：US09927379
申请日：2001-08-13
申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
IPC分类号： G11B5127
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3259 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193 , Y10T428/26 , Y10T428/265
摘要： A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.
摘要翻译： 磁阻效应元件包括自由层，被钉扎层和介于自由层和钉扎层之间的非磁性中间层。 另外，金属阻挡层设置成与第一磁性层相邻。 位于金属阻挡层附近的电子反射层含有选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种。
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3.发明授权公开(公告)号：US06303218B1
公开(公告)日：2001-10-16
申请号：US09273496
申请日：1999-03-22
申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
IPC分类号： G11B566
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3259 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193 , Y10T428/26 , Y10T428/265
摘要： According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and a non-magnetic intermediate layer interposed between said free layer and pinned layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and an electron reflecting layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides is also provided.
摘要翻译： 根据本发明的另一方面，一种具有磁阻效应膜的磁电阻效应元件，其包括作为其中的膜之一的晶体生长控制层，其特征在于，沿着覆盖所述晶体生长控制层的膜之间的边界的粗糙度小于 提供沿着所述晶体生长控制层下面的膜之间的边界的粗糙度。 根据本发明的另一方面，一种磁阻效应元件，包括置于所述自由层和钉扎层之间的自由层，被钉扎层和非磁性中间层，其特征在于还包括与所述第一磁体相邻设置的金属阻挡层 还提供了与所述金属阻挡层相邻并且包含选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种的电子反射层。
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公开(公告)号：US08153188B2
公开(公告)日：2012-04-10
申请号：US12248578
申请日：2008-10-09
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。
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公开(公告)号：US07514117B2
公开(公告)日：2009-04-07
申请号：US11199448
申请日：2005-08-09
IPC分类号： B05D5/12
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。
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公开(公告)号：US20090061105A1
公开(公告)日：2009-03-05
申请号：US12248578
申请日：2008-10-09
IPC分类号： B05D5/12
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。
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7.发明授权公开(公告)号：US07525776B2
公开(公告)日：2009-04-28
申请号：US11269878
申请日：2005-11-09
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3929 , H01F10/3259 , H01L27/224 , H01L27/228
摘要： A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.
摘要翻译： 磁阻元件具有磁化固定层，其磁化方向基本上被固定在一个方向上，磁化自由层的磁化方向根据外部磁场而变化，并且包括绝缘层的间隔层设置在磁化被钉扎层 以及穿过绝缘层的磁化自由层和电流路径，位于间隔层下方的磁化固定层或磁化自由层，其包含由跨过其厚度延伸的晶界分离的晶粒，其中，假设面内位置 将每个晶粒的一端设定为0，将与晶粒的另一端相邻的晶界的面内位置设定为100，在晶粒的区域形成与晶粒对应的电流路径 范围在平面内的20到80之间。
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8.发明授权公开(公告)号：US07190558B2
公开(公告)日：2007-03-13
申请号：US10178023
申请日：2002-06-24
申请人： Hitoshi Iwasaki , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Masashi Sahashi
发明人： Hitoshi Iwasaki , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Masashi Sahashi
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01L43/10
摘要： In a CPP element using a metal intermediate layer excellent in shot noise and response to high frequencies unlike a TMR element, its magnetoresistive effect film includes a magnetic layer mainly made of a half-metal exhibiting ferromagnetism, ferrimagnetism or antiferromagnetism, and largely variable in way of conduction in response to spin direction of electrons.
摘要翻译： 在使用与TMR元件不同的散粒噪声和高频响应的金属中间层的CPP元件中，其磁阻效应膜包括主要由呈现铁磁性，亚铁磁性或反铁磁性的半金属制成的磁性层，并且在很大程度上可变化 的响应于电子的自旋方向的传导。
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9.发明申请公开(公告)号：US20060098353A1
公开(公告)日：2006-05-11
申请号：US11269878
申请日：2005-11-09
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3929 , H01F10/3259 , H01L27/224 , H01L27/228
摘要： A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.
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10.发明授权公开(公告)号：US07471492B2
公开(公告)日：2008-12-30
申请号：US10895844
申请日：2004-07-22
IPC分类号： G11B5/127
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译： 磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层 磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括 位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。
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