发明申请
- 专利标题： PHASE CHANGE MEMORY STRUCTURES
- 专利标题（中）： 相变记忆结构
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申请号： US11864246申请日： 2007-09-28
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公开(公告)号： US20090085024A1公开(公告)日： 2009-04-02
- 发明人: Ramachandran Muralidhar , Tushar P. Merchant , Rajesh A. Rao
- 申请人： Ramachandran Muralidhar , Tushar P. Merchant , Rajesh A. Rao
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; B05D5/12
摘要：
A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion. The second electrode is electrically coupled to each of the pillars. In some examples, the pillars have a width less than 20 nanometers.
公开/授权文献
- US07811851B2 Phase change memory structures 公开/授权日：2010-10-12