发明申请
- 专利标题： SEMICONDUCTOR FABRICATION PROCESS INCLUDING SILICIDE STRINGER REMOVAL PROCESSING
- 专利标题（中）： 半导体制造工艺，包括硅酮切除加工
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申请号： US12244413申请日： 2008-10-02
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公开(公告)号： US20090093108A1公开(公告)日： 2009-04-09
- 发明人: Dharmesh Jawarani , John R. Alvis , Michael G. Harrison , Leo Mathew , John E. Moore , Rode R. Mora
- 申请人： Dharmesh Jawarani , John R. Alvis , Michael G. Harrison , Leo Mathew , John E. Moore , Rode R. Mora
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A semiconductor fabrication process includes forming a gate electrode (112) overlying a gate dielectric (114) overlying a semiconductor substrate (104) of a wafer (101) and a liner dielectric layer (116) including vertical portions (118) adjacent sidewalls of the gate electrode and horizontal portions (117) overlying an upper surface of the semiconductor substrate (104). A spacer (108) is formed adjacent a vertical portion (118) and overlying a horizontal portion (117) of the liner dielectric layer (116). After forming the spacer (108), exposed portions of the liner dielectric layer (116) are removed to form a liner dielectric structure (126) covered by the extension spacer (108). The extension spacer (108) is then etched back to expose or uncover extremities of the liner dielectric structure (126). Prior to etching back the spacer (108), a metal (130) may be sputtered deposited over the wafer (101) preparatory to forming a silicide (134). After the etch back the wafer (101) may be dipped in piranha solution and cleaned with an RF sputter (140) of argon.