发明申请
- 专利标题： NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US12249004申请日： 2008-10-10
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公开(公告)号： US20090096008A1公开(公告)日： 2009-04-16
- 发明人: Sun-jung Kim , Young-geun Park , Han-mei Choi , Seung-hwan Lee , Se-hoon Oh , Young-sun Kim , Sung-tae Kim
- 申请人： Sun-jung Kim , Young-geun Park , Han-mei Choi , Seung-hwan Lee , Se-hoon Oh , Young-sun Kim , Sung-tae Kim
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2007-0102584 20071010
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L23/58
摘要：
A nonvolatile memory device having a blocking insulating layer with an excellent data retention property and a method of fabricating the same are provided. The nonvolatile memory device may include a semiconductor substrate having a channel region formed therein; and a gate stack including a tunneling insulating layer, a charge storing layer, a blocking insulating layer and a control gate electrode sequentially stacked on the channel region of the semiconductor substrate. The blocking insulating layer may comprise a lanthanum aluminum oxide having a formula of La2-xAlxOy and the composition parameter x may be 1
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