- 专利标题： Method of identifying logical information in a programming and erasing cell by on-side reading scheme
-
申请号： US12314881申请日： 2008-12-18
-
公开(公告)号： US20090101966A1公开(公告)日： 2009-04-23
- 发明人: Chao-I Wu , Ming-Hsiu Lee , Tzu-Hsuan Hsu
- 申请人： Chao-I Wu , Ming-Hsiu Lee , Tzu-Hsuan Hsu
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A method of identifying logical information in a cell, particularly in a programming by hot hole injection nitride electron storage (PHINES) cell by one-side reading scheme is disclosed. The method comprise steps of: erasing the first region and the second region of PHINES cell by increasing a local threshold voltage (Vt) to a certain value; programming at least one of the first region and the second region of the PHINES cell by hot hole injection; and reading a logical state of the PHINES cell by measuring an output current of one of the first region and the second region; wherein different quantity of the output current is caused by interaction between different quantity of the hot hole stored in the first region and the second region, so as to determine the logical state of the PHINES cell by one-side reading scheme.
公开/授权文献
信息查询
IPC分类:
