Invention Application
US20090103680A1 Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials
有权
产生X射线衍射数据的方法,用于在超异质外延材料中双缺陷的积分检测
- Patent Title: Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials
- Patent Title (中): 产生X射线衍射数据的方法,用于在超异质外延材料中双缺陷的积分检测
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Application No.: US12254150Application Date: 2008-10-20
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Publication No.: US20090103680A1Publication Date: 2009-04-23
- Inventor: Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott
- Applicant: Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott
- Applicant Address: US DC Washington
- Assignee: U.S.A as represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee: U.S.A as represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee Address: US DC Washington
- Main IPC: G01N23/207
- IPC: G01N23/207

Abstract:
A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θB−β) where θB is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and β is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (θB+β). The material can be rotated through an angle of azimuthal rotation φ about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.
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