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    Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation
    1.
    发明授权
    Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation 有权
    通过分层纳米生成制造先进的热电材料

    公开(公告)号：US08083986B2

    公开(公告)日：2011-12-27

    申请号：US12315520

    申请日：2008-12-04

    申请人： Sang Hyouk Choi ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

    发明人： Sang Hyouk Choi ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

    IPC分类号： B28B1/00

    CPC分类号： C22C1/04 ,  B22F2998/00 ,  B22F1/0018

    摘要： A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

    摘要翻译： 制备高级热电材料的新方法具有嵌入纳米尺寸空隙的分层结构，这是提高热电性能的关键。 基于溶液的薄膜沉积技术使得能够制备出热电材料和空穴发生器（voigen）的稳定膜。 随后的热过程在热电材料内部产生分级纳米结构。 这种具有纳米结构的先进热电材料的潜在应用领域是商业应用（电子冷却），医学和科学应用（生物分析装置，医学成像系统），电信以及国防和军事应用（夜视设备）。

    Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials
    3.
    发明授权
    Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials 有权
    具有单晶性质的三面体立方体半导体材料和基于这种材料的器件

    公开(公告)号：US08257491B2

    公开(公告)日：2012-09-04

    申请号：US12288379

    申请日：2008-10-20

    申请人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

    发明人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

    IPC分类号： C30B33/06 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： G01N23/207

    摘要： Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

    摘要翻译： 开发基于温度依赖性取向模型的生长条件，以使得能够在三面晶体基底的（0001）面上形成[111]取向的立方体IV族，II-V族和II-VI族晶体， 控制使得与多数单晶相比，原生双晶的体积百分比从约40％降低至约0.3％。 本实施例和其它实施例中堆垛层错的控制可以产生基本上没有缺陷的这些材料的单晶半导体，或者具有用于声子散射的具有孪晶晶体的改进的热电材料，同时保持电气完整性。 这些方法可以选择性地产生立方晶三面体外延半导体材料，其中立方体层基本上与下面的三角形材料直接对准或者60度旋转。

    Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation
    5.
    发明申请
    Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation 有权
    通过分层纳米生成制造先进的热电材料

    公开(公告)号：US20090185942A1

    公开(公告)日：2009-07-23

    申请号：US12315520

    申请日：2008-12-04

    申请人： Sang Hyouk Choi, SR. ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

    发明人： Sang Hyouk Choi, SR. ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

    IPC分类号： B22F1/00

    CPC分类号： C22C1/04 ,  B22F2998/00 ,  B22F1/0018

    摘要： A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

    摘要翻译： 制备高级热电材料的新方法具有嵌入纳米尺寸空隙的分层结构，这是提高热电性能的关键。 基于溶液的薄膜沉积技术使得能够制备出热电材料和空穴发生器（voigen）的稳定膜。 随后的热过程在热电材料内部产生分级纳米结构。 这种具有纳米结构的先进热电材料的潜在应用领域是商业应用（电子冷却），医学和科学应用（生物分析装置，医学成像系统），电信以及国防和军事应用（夜视设备）。

    Lock-In Imaging System for Detecting Disturbances in Fluid
    6.
    发明申请
    Lock-In Imaging System for Detecting Disturbances in Fluid 有权
    用于检测流体扰动的锁定成像系统

    公开(公告)号：US20120200696A1

    公开(公告)日：2012-08-09

    申请号：US13020194

    申请日：2011-02-03

    申请人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott ,  Albert L. Dimarcantonio

    发明人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott ,  Albert L. Dimarcantonio

    IPC分类号： H04N7/18

    CPC分类号： G01P5/26 ,  G01P5/00 ,  G01S1/14 ,  G01S17/95 ,  Y02A90/19

    摘要： A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.

    摘要翻译： 锁定成像系统被配置为检测空气中的干扰。 该系统包括飞机，干涉仪和伸缩成像相机。 飞机包括机身和一对机翼。 飞机配置为在空中飞行。 干涉仪可操作地设置在飞机上并且被配置用于通过沿着两条路径将光束分成两束而产生干涉图案，并且在飞行中在飞机的前飞行路径中的接合点处重新组合两个波束。 伸缩成像照相机被配置为在接合点捕获光束的图像。 所述伸缩成像照相机被配置为基于在所述连接点检测到的所述图像的折射率来检测光路中的空气中的干扰。

    Method of generating X-ray diffraction data for integral detection of twin defects in super-hetero-epitaxial materials
    7.
    发明授权
    Method of generating X-ray diffraction data for integral detection of twin defects in super-hetero-epitaxial materials 有权
    产生X射线衍射数据的方法，用于整体检测超异质外延材料中的双缺陷

    公开(公告)号：US07558371B2

    公开(公告)日：2009-07-07

    申请号：US12254150

    申请日：2008-10-20

    申请人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

    发明人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

    IPC分类号： G01N23/20

    CPC分类号： G01N23/207

    摘要： A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θB−β) where θB is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and β is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (θB+β). The material can be rotated through an angle of azimuthal rotation φ about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.

    摘要翻译： 一种方法提供了适用于由具有属于不同空间群的对称性的晶体结构的组分制成的应变或晶格匹配的外延材料中的双缺陷的积分检测的X射线衍射数据。 该材料安装在X射线衍射（XRD）系统中。 在一个实施例中，XRD系统的测角仪角度Ω被设置为等于（θB-β），其中θB是相对于{111）晶体以非垂直取向设置的合金的指定晶面的布拉格角 平面，β是指定的晶面与外延成分之一的{111}晶面之间的角度。 XRD系统的检测器角度设置为等于（θB+β）。 材料可以围绕与材料对准的轴线旋转方位角旋转角度。 使用检测器，至少以发生双瑕疵的角度记录X射线衍射的强度。

    Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials
    8.
    发明申请
    Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials 有权
    产生X射线衍射数据的方法，用于在超异质外延材料中双缺陷的积分检测

    公开(公告)号：US20090103680A1

    公开(公告)日：2009-04-23

    申请号：US12254150

    申请日：2008-10-20

    申请人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

    发明人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

    IPC分类号： G01N23/207

    CPC分类号： G01N23/207

    摘要： A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θB−β) where θB is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and β is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (θB+β). The material can be rotated through an angle of azimuthal rotation φ about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.

    摘要翻译： 一种方法提供了适用于由具有属于不同空间群的对称性的晶体结构的组分制成的应变或晶格匹配的外延材料中的双缺陷的积分检测的X射线衍射数据。 该材料安装在X射线衍射（XRD）系统中。 在一个实施例中，XRD系统的测角仪角度Ω被设置为等于（θB-β），其中θB是相对于{111）晶体以非垂直取向设置的合金的指定晶面的布拉格角 平面，β是指定的晶面与外延成分之一的{111}晶面之间的角度。 XRD系统的检测器角度设置为等于（θB+β）。 材料可以围绕与材料对准的轴线旋转方位角旋转角度。 使用检测器，至少以发生双瑕疵的角度记录X射线衍射的强度。

    Lock-in imaging system for detecting disturbances in fluid
    9.
    发明授权
    Lock-in imaging system for detecting disturbances in fluid 有权
    锁定成像系统，用于检测流体中的扰动

    公开(公告)号：US08913124B2

    公开(公告)日：2014-12-16

    申请号：US13020194

    申请日：2011-02-03

    申请人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott ,  Albert L. Dimarcantonio

    发明人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott ,  Albert L. Dimarcantonio

    IPC分类号： H04N7/18 ,  G01P5/26 ,  G01P5/00 ,  G01S1/14 ,  G01S17/95

    CPC分类号： G01P5/26 ,  G01P5/00 ,  G01S1/14 ,  G01S17/95 ,  Y02A90/19

    摘要： A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.

    摘要翻译： 锁定成像系统被配置为检测空气中的干扰。 该系统包括飞机，干涉仪和伸缩成像相机。 飞机包括机身和一对机翼。 飞机配置为在空中飞行。 干涉仪可操作地设置在飞机上并且被配置用于通过沿着两条路径将光束分成两束而产生干涉图案，并且在飞行中在飞机的前飞行路径中的接合点处重新组合两个波束。 伸缩成像照相机被配置为在接合点捕获光束的图像。 所述伸缩成像照相机被配置为基于在所述连接点检测到的所述图像的折射率来检测光路中的空气中的干扰。

    Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials
    10.
    发明申请
    Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials 有权
    具有单晶性质的三面体立方体半导体材料和基于这种材料的器件

    公开(公告)号：US20090206368A1

    公开(公告)日：2009-08-20

    申请号：US12288379

    申请日：2008-10-20

    申请人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

    发明人： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

    IPC分类号： H01L29/778 ,  H01L29/04 ,  C23C14/34

    CPC分类号： G01N23/207

    摘要： Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

    摘要翻译： 开发基于温度依赖性取向模型的生长条件，以使得能够在三面晶体基底的（0001）面上形成[111]取向的立方体IV族，II-V族和II-VI族晶体， 控制使得与多数单晶相比，原生双晶的体积百分比从约40％降低至约0.3％。 在本实施例和其他实施例中，堆垛层错的控制可以产生基本上没有缺陷的这些材料的单晶半导体，或者具有用于声子散射的具有孪晶晶体的改进的热电材料，同时保持电气完整性。 这些方法可以选择性地产生立方晶三面体外延半导体材料，其中立方体层基本上与下面的三角形材料直接对准或者60度旋转。