发明申请
- 专利标题： Plasma Doping System With Charge Control
- 专利标题（中）： 带充电控制的等离子体掺杂系统
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申请号： US11875062申请日： 2007-10-19
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公开(公告)号： US20090104761A1公开(公告)日： 2009-04-23
- 发明人: Yongbae Jeon , Vikram Singh , Timothy Miller , Ziwei Fang , Steven Walther , Atul Gupta
- 申请人： Yongbae Jeon , Vikram Singh , Timothy Miller , Ziwei Fang , Steven Walther , Atul Gupta
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; C23C16/513
摘要：
A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.
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IPC分类:
