Invention Application
US20090108727A1 ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND MANUFACTURING METHOD OF ELECTRON-EMITTING DEVICE
审中-公开
电子发射装置，电子源，图像显示装置和电子发射装置的制造方法
- Patent Title: ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND MANUFACTURING METHOD OF ELECTRON-EMITTING DEVICE
- Patent Title (中): 电子发射装置，电子源，图像显示装置和电子发射装置的制造方法
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Application No.: US12255185Application Date: 2008-10-21
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Publication No.: US20090108727A1Publication Date: 2009-04-30
- Inventor: Kazushi Nomura , Ryoji Fujiwara , Michiyo Nishimura , Yoji Teramoto , Shunsuke Murakami
- Applicant: Kazushi Nomura , Ryoji Fujiwara , Michiyo Nishimura , Yoji Teramoto , Shunsuke Murakami
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Priority: JP2007-280201 20071029
- Main IPC: H01J1/00
- IPC: H01J1/00 ; H01J9/02
Abstract:
An electron-emitting device according to the present invention is characterized by that a gate electrode is located above a cathode electrode; a insulating member is located between the gate electrode and the cathode electrode; and the gate electrode and the insulating member are provided with openings, respectively, the openings being communicated with each other, wherein the insulating member is formed by layering three or more insulating layers including a first insulating layer, which is brought in contact with the gate electrode and has an opening, of which size is approximately the same as the size of the opening of the gate electrode; and a second insulating layer, which is located nearer to the side of the cathode electrode than the first insulating layer and has a larger opening than the opening of the gate electrode.
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