Abstract:
Provided is a piezoelectric material which has satisfactory insulation property and piezoelectric property and which does not contain lead and potassium. The piezoelectric material includes a perovskite-type metal oxide that is represented by the following general formula (1): (NaxBa1-y)(NbyTi1-y)O3 General formula (1) where relationships of 0.80≦x≦0.95 and 0.85≦y≦0.95 are satisfied, and y×0.05 mol % or more to y×2 mol % or less of copper with respect to 1 mol of the perovskite-type metal oxide.
Abstract:
Provided is an oriented piezoelectric ceramic of satisfactory piezoelectricity, which includes a metal oxide represented by (1−x)NaNbO3-xBaTiO3. Also provided are a piezoelectric element using the oriented piezoelectric ceramic which includes the metal oxide represented by (1−x)NaNbO3-xBaTiO3, and a liquid discharge head, an ultrasonic motor, and a dust removing device which use the piezoelectric element. An oriented piezoelectric ceramic includes as a main component a metal oxide represented by the following general formula (1), in which the oriented piezoelectric ceramic has a lead content and a potassium content that are each 1,000 ppm or less: (1−x)NaNbO3-xBaTiO3 . . . General formula (1), where a relationship of 0
Abstract:
A method for manufacturing an electron-emitting device according to the present invention includes a step of preparing a carbon layer containing conductive metallic particles, a step of oxidizing a portion the conductive metallic particles, and a step of forming a dipole layer on a surface of the carbon layer. An electron-emitting device according to the present invention is manufactured by the manufacturing method for the electron-emitting device. An electron source according to the present invention includes a plurality of the electron-emitting devices. An image display apparatus according to the present invention includes the electron source and a image forming member which forms an image by an electron emitted from the electron source.
Abstract:
An electron-emitting device according to the present invention is characterized by that a gate electrode is located above a cathode electrode; a insulating member is located between the gate electrode and the cathode electrode; and the gate electrode and the insulating member are provided with openings, respectively, the openings being communicated with each other, wherein the insulating member is formed by layering three or more insulating layers including a first insulating layer, which is brought in contact with the gate electrode and has an opening, of which size is approximately the same as the size of the opening of the gate electrode; and a second insulating layer, which is located nearer to the side of the cathode electrode than the first insulating layer and has a larger opening than the opening of the gate electrode.
Abstract:
Provided is a piezoelectric material which has satisfactory insulation property and piezoelectric property and which does not contain lead and potassium. The piezoelectric material includes a perovskite-type metal oxide that is represented by the following general formula (1): (NaxBa1-y)(NbyTi1-y)O3 General formula (1) where relationships of 0.80≦x≦0.95 and 0.85≦y≦0.95 are satisfied, and y×0.05 mol % or more to y×2 mol % or less of copper with respect to 1 mol of the perovskite-type metal oxide.
Abstract translation:提供具有令人满意的绝缘性能和压电性能并且不含铅和钾的压电材料。 压电材料包括由以下通式(1)表示的钙钛矿型金属氧化物:(NaxBa1-y)(NbyTi1-y)O3一般式(1)其中0.80 @ x @ 0.95和0.85 @ y @ 0.95,相对于1摩尔钙钛矿型金属氧化物,y×0.05摩尔%以上,y×2摩尔%以下的铜。
Abstract:
An object of the invention is to prove a method of producing an electron-emitting device, in which metal content in an electron emission film can be relatively easily controlled and adhesiveness between electrodes and the like in contact with the electron emission film and the electron emission film is good. The method is a method of producing an electron-emitting device including a cathode electrode and a metal-containing electron emission film located above the cathode electrode. The method includes a first step (A) of preparing an electroconductive first layer for the cathode, a second layer for the electron emission film located above the first layer, and a third layer for a metal-containing electron beam focusing electrode in contact with the second layer and a second step (B) of diffusing the metal from the third layer into the second layer.
Abstract:
There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.
Abstract:
An object of the invention is to prove a method of producing an electron-emitting device, in which metal content in an electron emission film can be relatively easily controlled and adhesiveness between electrodes and the like in contact with the electron emission film and the electron emission film is good. The method is a method of producing an electron-emitting device including a cathode electrode and a metal-containing electron emission film located above the cathode electrode. The method includes a first step (A) of preparing an electroconductive first layer for the cathode, a second layer for the electron emission film located above the first layer, and a third layer for a metal-containing electron beam focusing electrode in contact with the second layer and a second step (B) of diffusing the metal from the third layer into the second layer.
Abstract:
An electron-emitting device according to the present invention is an electron-emitting device having a cathode electrode, an insulating film provided on the cathode electrode, and a dipole layer provided on the insulating film, wherein the dipole layer is formed by terminating the insulating film with an NH group. An electron source according to the present invention has a plurality of the electron-emitting devices. An image display apparatus according to the present invention has the electron source and a light emitting member that emits light by irradiation with electrons.
Abstract:
A manufacturing method of an electron-emitting device according to a present invention including the steps of: preparing a substrate having a carbon film, and a terminating a surface of the carbon film with hydrogen by irradiating a light or particle beam locally to a part of the carbon film in an atmosphere including hydrocarbon or hydrogen or in an atmosphere including both hydrocarbon and hydrogen.