摘要:
An electron emitting device comprising on a substrate: an electrode extracting electrons from the electron emitting portion, the electrode applied with a voltage higher then the cathode electrode; and an deflecting electrode deflecting the electrons extracted from the electron emitting portion by the extraction electrode, the deflecting electrode applied with the voltage lower than the voltage of the extraction electrode; wherein the electron emitting device is disposed so as to be opposed to an anode electrode, and the extraction electrode is disposed between the cathode electrode and the deflecting electrode, and wherein the deflecting electrode comprises a portion opposed to the electron emitting portion, and other portions disposed to nip a region between the electron emitting portion and said portion in a direction crossing the direction along which the portion and the electron emitting portion are opposed.
摘要:
A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.
摘要:
An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.
摘要:
There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.
摘要:
An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.
摘要:
A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.
摘要:
To provide an electron-emitting device having an electron-emitting film containing a metal and a carbon, wherein a density of the electron-emitting film other than the metal is determined to be not less than 1.2 g/cm3 and not more than 1.8 g/cm3, and a hydrogen content in the electron-emitting film is determined to be not less than 15 atm % and not more than 40 atm % with respect to the all atoms composing the electron-emitting film. Further, a concentration of the metal in the range of a depth from a surface of this electron-emitting film up to 10 nm is determined to be not less than 0.1 atm % and not more than 40 atm % with respect to number of carbon atoms contained in the electron-emitting film.
摘要翻译:为了提供具有含有金属和碳的电子发射膜的电子发射器件,其中除了金属之外的电子发射膜的密度确定为不小于1.2g / cm 3且不大于1.8g / cm 3,并且电子发射膜中的氢含量相对于构成电子发射膜的全部原子被确定为不小于15atm%且不大于40atm%。 此外,相对于碳原子数,将从该电子发射膜的表面到深度10nm的深度范围内的金属浓度确定为不小于0.1atm%且不大于40atm% 包含在电子发射膜中。
摘要:
The present invention provide a lateral type electron-emitting device in which abnormal discharge near an electron-emitting region is suppressed, electron emission characteristics are stable, and electron emission efficiency is high. A method of manufacturing an electron-emitting device of the invention includes: a first step of preparing an electron-emitting electrode and a control electrode that are arranged on a surface of an insulating substrate; and a second step of covering the surface of the insulating substrate, which is located between the electron-emitting electrode and the control electrode, with a resistive film to connect the electron-emitting electrode and the control electrode. In the method of manufacturing an electron-emitting device, the resistive film is arranged to cover an end of a surface of the electron-emitting electrode opposed to the control electrode.
摘要:
Disclosed is an electron-emitting device, an electron source, and an image-forming apparatus that have uniform electron-emitting characteristics, emit electron beams whose diameters are small, have simple constructions, and are easy to be manufactured. The electron-emitting device comprising: a first electrode arranged on a surface of a substrate; an insulating layer arranged on the first electrode; a second electrode arranged on the insulating layer; and an electron-emitting film arranged on the second electrode, where the second electrode has two side surfaces that oppose each other in a direction parallel to the surface of the substrate, and the electron-emitting film is arranged so as to be shifted toward one of the two side surfaces.
摘要:
A cylinder chamber 17 at the front of a direct-acting type actuator section 10 is connected to a cylinder chamber 37 at the front of an oscillating type actuator section 30 through a sequence valve with check valve 40. Further, a cylinder chamber 18 in the rear of the direct-acting type actuator section 10 is connected to a cylinder chamber 38 in the rear of the oscillating type actuator 30 through a stop valve 50. Ports 61 and 62 are provided for connecting passages between the cylinder chamber 37 and the sequence valve with check valve 40 and between the cylinder chamber 18 and the stop valve 50, respectively, for distribution control of a working fluid. According to the setting conditions of the respective valves 40 and 50, the piston rod 11 can perform an ordinary reciprocating motion and a motion that combines rotation and advancement.