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1.发明申请ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND METHOD FOR MANUFACTURING ELECTRON-EMITTING DEVICE 审中-公开电子发射装置，电子源，图像显示装置和制造电子发射装置的方法公开(公告)号：US20090153013A1
公开(公告)日：2009-06-18
申请号：US12331236
申请日：2008-12-09
CPC分类号： H01J1/30 , H01J9/022 , H01J31/127 , H01J2201/30 , H01J2329/0405
摘要： A method for manufacturing an electron-emitting device according to the present invention includes a step of preparing a carbon layer containing conductive metallic particles, a step of oxidizing a portion the conductive metallic particles, and a step of forming a dipole layer on a surface of the carbon layer. An electron-emitting device according to the present invention is manufactured by the manufacturing method for the electron-emitting device. An electron source according to the present invention includes a plurality of the electron-emitting devices. An image display apparatus according to the present invention includes the electron source and a image forming member which forms an image by an electron emitted from the electron source.
摘要翻译： 根据本发明的制造电子发射器件的方法包括制备含有导电金属颗粒的碳层，氧化导电金属颗粒的一部分的步骤和在偶极子层的表面上形成偶极层的步骤 碳层。 根据本发明的电子发射器件通过电子发射器件的制造方法制造。 根据本发明的电子源包括多个电子发射器件。 根据本发明的图像显示装置包括电子源和通过从电子源发射的电子形成图像的图像形成部件。
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2.发明申请ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND MANUFACTURING METHOD OF ELECTRON-EMITTING DEVICE 审中-公开电子发射装置，电子源，图像显示装置和电子发射装置的制造方法公开(公告)号：US20090108727A1
公开(公告)日：2009-04-30
申请号：US12255185
申请日：2008-10-21
CPC分类号： H01J31/127 , H01J29/467
摘要： An electron-emitting device according to the present invention is characterized by that a gate electrode is located above a cathode electrode; a insulating member is located between the gate electrode and the cathode electrode; and the gate electrode and the insulating member are provided with openings, respectively, the openings being communicated with each other, wherein the insulating member is formed by layering three or more insulating layers including a first insulating layer, which is brought in contact with the gate electrode and has an opening, of which size is approximately the same as the size of the opening of the gate electrode; and a second insulating layer, which is located nearer to the side of the cathode electrode than the first insulating layer and has a larger opening than the opening of the gate electrode.
摘要翻译： 根据本发明的电子发射器件的特征在于栅电极位于阴极上方; 绝缘构件位于栅电极和阴极之间; 并且所述栅电极和所述绝缘构件分别设置有所述开口彼此连通的开口，其中所述绝缘构件通过层叠三个或更多个绝缘层而形成，所述绝缘层包括与所述栅极接触的第一绝缘层 电极，其开口大小与栅电极的开口尺寸大致相同; 以及第二绝缘层，其位于比第一绝缘层更靠近阴极侧的并且具有比栅电极的开口大的开口。
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3.发明授权Electron-emitting device, electron source, image display apparatus, and manufacturing method of electron-emitting device 失效电子发射器件，电子源，图像显示装置和电子发射器件的制造方法公开(公告)号：US08075360B2
公开(公告)日：2011-12-13
申请号：US12253668
申请日：2008-10-17
CPC分类号： H01J9/025 , H01J31/127 , H01J2201/30453 , H01J2329/0444
摘要： A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.
摘要翻译： 一种电子发射器件的制造方法，包括以下步骤：预先制备设置有绝缘或半导体层的基底衬底，并将该层暴露于包含含有中性自由基的氢的气氛中。 优选绝缘或半导电层含有金属颗粒; 绝缘或半导体层是以碳为主要成分的膜; 含氢的中性基团含有H.，CH 3，C 2 H 5和C 2 H中的任何一种。 或其混合气体; 与大气中的带电粒子的密度相比，气氛中含有氢的中性基团的密度大于1000倍; 并且将绝缘或半导体层暴露于大气的步骤是通过使用具有偏置栅格的等离子体装置进行氢终止的步骤。
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4.发明授权Electron-emitting device, electron source, image display apparatus, and manufacturing method of electron-emitting device 失效电子发射器件，电子源，图像显示装置和电子发射器件的制造方法公开(公告)号：US07994701B2
公开(公告)日：2011-08-09
申请号：US12327858
申请日：2008-12-04
IPC分类号： H01J1/62
CPC分类号： H01J31/127 , H01J29/04
摘要： An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.
摘要翻译： 根据本发明的电子发射器件具有阴极电极，第一电极，第二电极，绝缘层，栅电极和电子发射部件。 栅电极，绝缘层和第一电极分别具有彼此连通的开口。 电子发射部件设置在阴极电极上，电子发射部件的至少一部分在开口中露出。 第二电极设置在第一电极的开口中并电连接到阴极电极。
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5.发明申请ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND INFORMATION DISPLAY REPRODUCING APPARATUS 失效电子源，图像显示装置和信息显示再现装置公开(公告)号：US20090322712A1
公开(公告)日：2009-12-31
申请号：US12302330
申请日：2008-02-29
CPC分类号： H01J29/04 , H01J1/304 , H01J31/127
摘要： There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.
摘要翻译： 提供一种电子源，包括：绝缘衬底; 布置在所述绝缘基板上的第一布线; 布置在所述绝缘基板上并与所述第一布线相交的第二布线; 以及电子发射器件，其具有设置有电子发射部件的阴极和布置在阴极电极上方的栅电极，该阴极设置在绝缘基板上，并与第一布线的交叉部分与第二布线分离; 其中所述第一布线经由绝缘层布置在所述第二布线上; 栅电极设置有多个狭缝状开口，其间隔地基本平行地布置; 并且开口被布置成使得其纵向方向上的延伸线与第一布线相交。
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6.发明申请ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND MANUFACTURING METHOD OF ELECTRON-EMITTING DEVICE 失效电子发射装置，电子源，图像显示装置和电子发射装置的制造方法公开(公告)号：US20090140627A1
公开(公告)日：2009-06-04
申请号：US12327858
申请日：2008-12-04
CPC分类号： H01J31/127 , H01J29/04
摘要： An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.
摘要翻译： 根据本发明的电子发射器件具有阴极电极，第一电极，第二电极，绝缘层，栅电极和电子发射部件。 栅电极，绝缘层和第一电极分别具有彼此连通的开口。 电子发射部件设置在阴极电极上，电子发射部件的至少一部分在开口中露出。 第二电极设置在第一电极的开口中并电连接到阴极电极。
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7.发明申请ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND MANUFACTURING METHOD OF ELECTRON-EMITTING DEVICE 失效电子发射装置，电子源，图像显示装置和电子发射装置的制造方法公开(公告)号：US20090111350A1
公开(公告)日：2009-04-30
申请号：US12253668
申请日：2008-10-17
IPC分类号： H01J9/12
CPC分类号： H01J9/025 , H01J31/127 , H01J2201/30453 , H01J2329/0444
摘要： A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.
摘要翻译： 一种电子发射器件的制造方法，包括以下步骤：预先制备设置有绝缘或半导体层的基底衬底，并将该层暴露于含有含有中性基团的氢的气氛中。 优选绝缘或半导电层含有金属颗粒; 绝缘或半导体层是以碳为主要成分的膜; 含氢的中性基团含有H.，CH 3，C 2 H 5和C 2 H中的任何一种。 或其混合气体; 与大气中的带电粒子的密度相比，气氛中含有氢的中性基团的密度大于1000倍; 并且将绝缘或半导体层暴露于大气的步骤是通过使用具有偏置栅格的等离子体装置进行氢终止的步骤。
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8.发明申请ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND INFORMATION DISPLAY REPRODUCING APPARATUS 审中-公开电子发射装置，电子源，图像显示装置和信息显示再现装置公开(公告)号：US20090026914A1
公开(公告)日：2009-01-29
申请号：US12173988
申请日：2008-07-16
IPC分类号： H01J1/54
CPC分类号： H01J31/127 , H01J1/304 , H01J2329/0442 , H01J2329/0457
摘要： To provide an electron-emitting device having an electron-emitting film containing a metal and a carbon, wherein a density of the electron-emitting film other than the metal is determined to be not less than 1.2 g/cm3 and not more than 1.8 g/cm3, and a hydrogen content in the electron-emitting film is determined to be not less than 15 atm % and not more than 40 atm % with respect to the all atoms composing the electron-emitting film. Further, a concentration of the metal in the range of a depth from a surface of this electron-emitting film up to 10 nm is determined to be not less than 0.1 atm % and not more than 40 atm % with respect to number of carbon atoms contained in the electron-emitting film.
摘要翻译： 为了提供具有含有金属和碳的电子发射膜的电子发射器件，其中除了金属之外的电子发射膜的密度确定为不小于1.2g / cm 3且不大于1.8g / cm 3，并且电子发射膜中的氢含量相对于构成电子发射膜的全部原子被确定为不小于15atm％且不大于40atm％。 此外，相对于碳原子数，将从该电子发射膜的表面到深度10nm的深度范围内的金属浓度确定为不小于0.1atm％且不大于40atm％ 包含在电子发射膜中。
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9.发明授权Electron source, image display apparatus, and information display reproducing apparatus 失效电子源，图像显示装置和信息显示再现装置公开(公告)号：US08125470B2
公开(公告)日：2012-02-28
申请号：US12302330
申请日：2008-02-29
CPC分类号： H01J29/04 , H01J1/304 , H01J31/127
摘要： There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.
摘要翻译： 提供一种电子源，包括：绝缘衬底; 布置在所述绝缘基板上的第一布线; 布置在所述绝缘基板上并与所述第一布线相交的第二布线; 以及电子发射器件，其具有设置有电子发射部件的阴极和布置在阴极电极上方的栅电极，该阴极设置在绝缘基板上，并与第一布线的交叉部分与第二布线分离; 其中所述第一布线经由绝缘层布置在所述第二布线上; 栅电极设置有多个狭缝状开口，其间隔地基本平行地布置; 并且开口被布置成使得其纵向方向上的延伸线与第一布线相交。
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10.发明申请公开(公告)号：US20090153014A1
公开(公告)日：2009-06-18
申请号：US12331244
申请日：2008-12-09
IPC分类号： H01J1/00
CPC分类号： H01J31/127 , H01J29/04
摘要： An electron-emitting device according to the present invention is an electron-emitting device having a cathode electrode, an insulating film provided on the cathode electrode, and a dipole layer provided on the insulating film, wherein the dipole layer is formed by terminating the insulating film with an NH group. An electron source according to the present invention has a plurality of the electron-emitting devices. An image display apparatus according to the present invention has the electron source and a light emitting member that emits light by irradiation with electrons.
摘要翻译： 根据本发明的电子发射器件是具有阴极电极，设置在阴极电极上的绝缘膜和设置在绝缘膜上的偶极子层的电子发射器件，其中偶极层通过端接绝缘体而形成 电影与NH组。 根据本发明的电子源具有多个电子发射器件。 根据本发明的图像显示装置具有电子源和通过照射电子而发光的发光部件。
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