发明申请
- 专利标题: DETECTION CIRCUIT AND FOREIGN MATTER INSPECTION APPARATUS FOR SEMICONDUCTOR WAFER
- 专利标题(中): 半导体波形检测电路和外部检测装置
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申请号: US12266663申请日: 2008-11-07
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公开(公告)号: US20090122305A1公开(公告)日: 2009-05-14
- 发明人: Masami MAKUUCHI , Ritsuro Orihashi , Takahiro Jingu
- 申请人: Masami MAKUUCHI , Ritsuro Orihashi , Takahiro Jingu
- 优先权: JP2007-292106 20071109
- 主分类号: G01N21/88
- IPC分类号: G01N21/88
摘要:
In a foreign matter inspection apparatus for a semiconductor wafer, a PMT which detects reflection light, an amplifier which amplifies a signal detected by the PMT and in which response characteristics of amplification are controlled by a control signal, an A/D converter which converts the signal amplified by the amplifier into a predetermined code and outputs the code, a control circuit which generates a control signal based on information of the semiconductor wafer having a correlation with the reflection light, and a data processing circuit which detects a foreign matter on the semiconductor wafer based on the code output from the A/D converter are provided.
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