发明申请
- 专利标题: WAFER LEVEL SENSING PACKAGE AND MANUFACTURING PROCESS THEREOF
- 专利标题(中): WAFER水平感测包装及其制造工艺
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申请号: US12331539申请日: 2008-12-10
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公开(公告)号: US20090124074A1公开(公告)日: 2009-05-14
- 发明人: Lung-Tai Chen , Chun-Hsun Chu , Tzong-Che Ho , Bor-Chen Tsai
- 申请人: Lung-Tai Chen , Chun-Hsun Chu , Tzong-Che Ho , Bor-Chen Tsai
- 申请人地址: TW Hsinchu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址: TW Hsinchu
- 优先权: TW096143100 20071114
- 主分类号: H01L21/768
- IPC分类号: H01L21/768
摘要:
A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.
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