Invention Application
- Patent Title: RECESSED CHANNEL DEVICE AND METHOD THEREOF
- Patent Title (中): 记忆通道装置及其方法
-
Application No.: US12103590Application Date: 2008-04-15
-
Publication No.: US20090134442A1Publication Date: 2009-05-28
- Inventor: Shian-Jyh Lin , Yuan Tsung Chang , Shun-Fu Chen , Chung-Tze Lin , Chung-Yuan Lee , Tse Chuan Kuo
- Applicant: Shian-Jyh Lin , Yuan Tsung Chang , Shun-Fu Chen , Chung-Tze Lin , Chung-Yuan Lee , Tse Chuan Kuo
- Applicant Address: TW Taoyuan
- Assignee: NANYA TECHNOLOGY CORP.
- Current Assignee: NANYA TECHNOLOGY CORP.
- Current Assignee Address: TW Taoyuan
- Priority: TW96145005 20071127
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/8242
Abstract:
A method for forming a recessed channel device includes providing a substrate with a plurality of trench capacitors formed therein, each of the trench capacitors including a plug protruding above the substrate; forming a spacer on each of the plugs; forming a plurality of trench isolations along a first direction in the substrate adjacent to the trench capacitors so as to define an active area exposing the substrate; removing a portion of the substrate by using the spacers and the trench isolations as a mask to form a recessed channel; and trimming the recessed channel so that a surface profile of the recessed channel presents a three-dimensional shape. A recessed channel device with a rounded channel profile is also provided.
Information query
IPC分类:
