发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US12268118申请日： 2008-11-10
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公开(公告)号： US20090140233A1公开(公告)日： 2009-06-04
- 发明人: Masaharu KINOSHITA , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
- 申请人： Masaharu KINOSHITA , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
- 优先权： JP2007-292723 20071112
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A nonvolatile semiconductor memory device having a large storage capacity and stabilized rewriting conditions in which a memory cell includes a nonvolatile recording material layer, a selector element and a semiconductor layer provided between the nonvolatile recording material layer and the selector element and having a thickness ranging from 5 to 200 nm.