发明申请
- 专利标题： HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD
- 专利标题（中）： 异体结构设备及相关方法
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申请号： US11946959申请日： 2007-11-29
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公开(公告)号： US20090140293A1公开(公告)日： 2009-06-04
- 发明人: Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Vinayak Tilak , Siddharth Rajan , Ho-Young Cha
- 申请人： Alexei Vertiatchikh , Kevin Sean Matocha , Peter Micah Sandvik , Vinayak Tilak , Siddharth Rajan , Ho-Young Cha
- 申请人地址： US NY SCHENECTADY
- 专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人地址： US NY SCHENECTADY
- 主分类号： H01L29/778
- IPC分类号： H01L29/778
摘要：
A heterostructure device or article includes a carrier transport layer, a back channel layer and a barrier layer. The carrier transport layer has a first surface and a second surface opposing to the first surface. The back channel layer is secured to the first surface of the carrier transport layer and the barrier layer is secured to the second surface of the carrier transport layer. Each of the carrier transport layer, the back channel layer and the barrier layer comprises an aluminum gallium nitride alloy. The article further includes a 2D electron gas at an interface of the second surface of the carrier transport layer and a surface of the barrier layer. The 2D electron gas is defined by a bandgap differential at an interface, which allows for electron mobility. A system includes a heterostructure field effect transistor that includes the article.
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