发明申请
- 专利标题: STRUCTURE FOR IMPLEMENTING REFRESHLESS SINGLE TRANSISTOR CELL eDRAM FOR HIGH PERFORMANCE MEMORY APPLICATIONS
- 专利标题(中): 用于实现高性能存储器应用的无刷单晶片单元的结构
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申请号: US12116234申请日: 2008-05-07
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公开(公告)号: US20090144504A1公开(公告)日: 2009-06-04
- 发明人: John E. Barth, JR. , Erik L. Hedberg , Robert M. Houle , Hillery C. Hunter , Peter A. Sandon
- 申请人: John E. Barth, JR. , Erik L. Hedberg , Robert M. Houle , Hillery C. Hunter , Peter A. Sandon
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A design structure embodied in a machine readable medium used in a design process includes a cache structure having a cache tag array associated with a eDRAM data cache comprising a plurality of cache lines, the cache tag array having an address tag, a valid bit and an access bit corresponding to each of the plurality of cache lines; and each access bit configured to indicate whether the corresponding cache line has been accessed as a result of a read or a write operation during a defined assessment period, which is smaller than retention time of data in the DRAM data cache; wherein, for any of the cache lines not accessed as a result of a read or a write operation during the defined assessment period, the individual valid bit associated therewith is set to a logic state that indicates the data in the associated cache line is invalid.
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