发明申请
US20090147589A1 Selective Application Of Word Line Bias To Minimize Fringe Effects In Electromagnetic Fields During Erase Of Nonvolatile Memory
有权
在非易失性存储器擦除期间,字线偏置的选择性应用以最小化电磁场中的边缘效应
- 专利标题: Selective Application Of Word Line Bias To Minimize Fringe Effects In Electromagnetic Fields During Erase Of Nonvolatile Memory
- 专利标题(中): 在非易失性存储器擦除期间,字线偏置的选择性应用以最小化电磁场中的边缘效应
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申请号: US11953689申请日: 2007-12-10
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公开(公告)号: US20090147589A1公开(公告)日: 2009-06-11
- 发明人: Gulzar Ahmed Kathawala , Wei Zheng , Zhizheng Liu , Sung-Yong Chung , Timothy Thurgate , Kuo-Tung Chang , Sheung-Hee Park , Gabrielle Wing Han Leung
- 申请人: Gulzar Ahmed Kathawala , Wei Zheng , Zhizheng Liu , Sung-Yong Chung , Timothy Thurgate , Kuo-Tung Chang , Sheung-Hee Park , Gabrielle Wing Han Leung
- 申请人地址: US CA Sunnyvale
- 专利权人: Spansion LLC
- 当前专利权人: Spansion LLC
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: G11C16/18
- IPC分类号: G11C16/18
摘要:
A memory device comprising an optimization component that facilitates erasing memory cells in a substantially homogeneous electromagnetic field and methods that facilitate erasing memory cells in a substantially homogeneous electromagnetic field are presented. The optimization component facilitates selecting a subset of memory cells to be erased at the same time, such that a memory cell in the subset of memory cells has two neighbor memory cells adjacent thereto that are in the subset of memory, or one neighbor memory cell adjacent thereto when the memory cell is an end-row memory cell. The optimization component facilitates performing a Fowler-Nordheim channel erase to erase the subset of memory cells, and a predetermined voltage potential associated with an erase command is applied to each cell of the subset of memory cells to facilitate reducing fringing effect associated with the electromagnetic fields applied to the cells during the erase.
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