发明申请
US20090176381A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
审中-公开
制造半导体器件和衬底加工设备的方法
- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
- 专利标题（中）： 制造半导体器件和衬底加工设备的方法
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申请号： US12344899申请日： 2008-12-29
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公开(公告)号： US20090176381A1公开(公告)日： 2009-07-09
- 发明人: Shin HIYAMA , Toru Kakuda , Yukitomo Hirochi
- 申请人： Shin HIYAMA , Toru Kakuda , Yukitomo Hirochi
- 专利权人： Hitachi-Kokusai Electric Inc.
- 当前专利权人： Hitachi-Kokusai Electric Inc.
- 优先权： JP2008-000956 20080108
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; B01J19/08
摘要：
There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus that are designed to suppress a popping phenomenon and reduce residues remaining on a substrate in a photoresist removing process. Oxygen gas and hydrogen gas are supplied to a plasma generating chamber while maintaining the hydrogen atom/oxygen atom ratio of the oxygen and hydrogen gases equal to or higher than 3, and the oxygen gas and the hydrogen gas are excited into plasma in the plasma generating chamber so as to remove photoresist from a substrate accommodated in a treatment chamber installed contiguous to the plasma generating chamber.
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