公开(公告)号：US20120132228A1

公开(公告)日：2012-05-31

申请号：US13306277

申请日：2011-11-29

申请人： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

发明人： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

IPC分类号： B08B6/00 ,  H01L21/3065

CPC分类号： H01J37/32458 ,  G03F7/427 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32633 ,  H01L21/31138

摘要： A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

摘要翻译： 用于产生等离子体的常规基板处理装置不能产生高密度的等离子体，因此基板处理的生产量低。 为了解决这个问题，提供了一种基板处理装置，其包括具有管状形状的反应容器，并且设置有设置在其外周的线圈; 安装在反应容器的第一端的盖子; 安装在盖子上的气体导入口; 安装在气体引入口和线​​圈的上端之间的第一板; 安装在所述第一板和所述线圈的上端之间的第二板; 安装在反应容器的第二端的基板处理室; 以及连接到基板处理室的排气部。

公开(公告)号：US09911580B2

公开(公告)日：2018-03-06

申请号：US13306277

申请日：2011-11-29

申请人： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

发明人： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

IPC分类号： H01L21/3065 ,  B08B6/00 ,  H01J37/32 ,  G03F7/42 ,  H01L21/311

CPC分类号： H01J37/32458 ,  G03F7/427 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32633 ,  H01L21/31138

摘要： A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

公开(公告)号：US20090176381A1

公开(公告)日：2009-07-09

申请号：US12344899

申请日：2008-12-29

申请人： Shin HIYAMA ,  Toru Kakuda ,  Yukitomo Hirochi

发明人： Shin HIYAMA ,  Toru Kakuda ,  Yukitomo Hirochi

IPC分类号： H01L21/26 ,  B01J19/08

CPC分类号： H01L21/6719 ,  G03F7/427 ,  H01J37/321 ,  H01L21/31138 ,  H01L21/67196 ,  H01L21/67201

摘要： There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus that are designed to suppress a popping phenomenon and reduce residues remaining on a substrate in a photoresist removing process. Oxygen gas and hydrogen gas are supplied to a plasma generating chamber while maintaining the hydrogen atom/oxygen atom ratio of the oxygen and hydrogen gases equal to or higher than 3, and the oxygen gas and the hydrogen gas are excited into plasma in the plasma generating chamber so as to remove photoresist from a substrate accommodated in a treatment chamber installed contiguous to the plasma generating chamber.

摘要翻译： 提供一种制造半导体器件和基板处理设备的方法，其被设计为抑制光刻胶去除工艺中的弹出现象并减少残留在基板上的残余物。 将氧气和氢气供给到等离子体发生室，同时保持氧气和氢气的氢原子/氧原子比等于或高于3，并且氧气和氢气在等​​离子体产生中被激发成等离子体 从而从容纳在与等离子体发生室邻接设置的处理室中的基板上除去光致抗蚀剂。

公开(公告)号：US20080096392A1

公开(公告)日：2008-04-24

申请号：US11905716

申请日：2007-10-03

申请人： Toru Kakuda

发明人： Toru Kakuda

IPC分类号： H01L21/302

CPC分类号： H01L21/31138 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449

摘要： An ashing system capable of restraining etching and damage of an oxide film or a nitride film on a semiconductor substrate and ashing a resist uniformly at a very high rate is to be provided. The ashing system includes a reaction tube, a coil and a high frequency power source for inducing and maintaining a high frequency gas discharge at inside of the reaction tube, and a chamber including a susceptor for holding a semiconductor substrate a and directly connected to the reaction tube, in which only oxygen gas is introduced into the reaction tube while exhausting inside of the reaction tube and inside of the chamber, and a pressure at inside of the reaction tube and inside of the chamber in ashing falls in a range equal to or higher than 250 Pa and equal to or lower than 650 Pa.

摘要翻译： 可以提供能够抑制半导体衬底上的氧化膜或氮化物膜的蚀刻和损伤并以非常高的速率均匀地灰化抗蚀剂的灰化系统。 灰化系统包括用于在反应管内部诱导和保持高频气体放电的反应管，线圈和高频电源，以及包括用于保持半导体衬底a并直接连接到反应的基座的室 管，其中只有氧气被引入反应管中，同时排出反应管内部和室内，并且反应管内部和灰化内部的压力落在等于或更高的范围内 超过250Pa且等于或低于650Pa。