公开(公告)号：US20090176381A1

公开(公告)日：2009-07-09

申请号：US12344899

申请日：2008-12-29

申请人： Shin HIYAMA ,  Toru Kakuda ,  Yukitomo Hirochi

发明人： Shin HIYAMA ,  Toru Kakuda ,  Yukitomo Hirochi

IPC分类号： H01L21/26 ,  B01J19/08

CPC分类号： H01L21/6719 ,  G03F7/427 ,  H01J37/321 ,  H01L21/31138 ,  H01L21/67196 ,  H01L21/67201

摘要： There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus that are designed to suppress a popping phenomenon and reduce residues remaining on a substrate in a photoresist removing process. Oxygen gas and hydrogen gas are supplied to a plasma generating chamber while maintaining the hydrogen atom/oxygen atom ratio of the oxygen and hydrogen gases equal to or higher than 3, and the oxygen gas and the hydrogen gas are excited into plasma in the plasma generating chamber so as to remove photoresist from a substrate accommodated in a treatment chamber installed contiguous to the plasma generating chamber.

摘要翻译： 提供一种制造半导体器件和基板处理设备的方法，其被设计为抑制光刻胶去除工艺中的弹出现象并减少残留在基板上的残余物。 将氧气和氢气供给到等离子体发生室，同时保持氧气和氢气的氢原子/氧原子比等于或高于3，并且氧气和氢气在等​​离子体产生中被激发成等离子体 从而从容纳在与等离子体发生室邻接设置的处理室中的基板上除去光致抗蚀剂。

公开(公告)号：US20130019894A1

公开(公告)日：2013-01-24

申请号：US13535404

申请日：2012-06-28

申请人： Yutaka KUDOU ,  Shin HIYAMA

发明人： Yutaka KUDOU ,  Shin HIYAMA

IPC分类号： B08B7/00 ,  B08B13/00

CPC分类号： H01J37/321

摘要： In a plasma ashing processing on a sample including a Low-k film, a processing method that can prevent or reduce a film damage on the Low-k film while performing a high speed ashing processing is provided. A plasma processing method for performing a plasma processing on the sample including a Low-k film 15 includes: a step of performing plasma etching on the sample; and a step of performing plasma ashing on the sample including the Low-k film 15 with a resist mask 13, a carbon hard mask 14, and by-products 16 that have been subjected to plasma etching in the plasma etching process by a carbon (C+) radical 18 and a hydrogen (H+) radical 20 generated from methane (CH4) gas 19, using mixed gas including the methane (CH4) gas 19, which is hydrocarbon gas, and argon (Ar) gas, which is noble gas.

摘要翻译： 在包括Low-k膜的样品的等离子体灰化处理中，提供了可以在执行高速灰化处理时可以防止或减少Low-k膜上的膜损伤的处理方法。 对包含Low-k膜15的样品进行等离子体处理的等离子体处理方法包括：对样品进行等离子体蚀刻的步骤; 以及在等离子体蚀刻工艺中用碳进行等离子体蚀刻的具有抗蚀剂掩模13，碳硬掩模14和副产物16的包含Low-k膜15在内的样品上进行等离子体灰化的步骤 C +）基团18和由甲烷（CH4）气体19产生的氢（H +）自由基20，使用包括作为惰性气体的烃气体的甲烷（CH 4）气体19和作为惰性气体的氩（Ar）气）的混合气体。

公开(公告)号：US20100330773A1

公开(公告)日：2010-12-30

申请号：US12822304

申请日：2010-06-24

申请人： Shin HIYAMA

发明人： Shin HIYAMA

IPC分类号： H01L21/31 ,  B05C11/10

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/4405 ,  C23C16/482 ,  C23C16/488 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02277

摘要： Provided is a substrate processing method, which can fill an insulating film in a groove having a small width with a high aspect ratio and improve the productivity. The substrate processing method comprises loading a substrate into a processing chamber, supplying silicon compound gas including carbon and hydrogen into the processing chamber, irradiating ultraviolet light on the silicon compound gas supplied into the processing chamber to process the substrate, unloading the processed substrate from the processing chamber, and processing the inside of the processing chamber with excited oxygen-containing gas. Accordingly, an adhered matter generated when irradiating the ultraviolet light on the silicon compound gas to process the substrate and adhered to a structure such as an inner wall of the processing chamber can be processed with the excited oxygen-containing gas to modify it.

摘要翻译： 提供一种基板处理方法，其可以在具有高纵横比的宽度小的凹槽中填充绝缘膜，并提高生产率。 基板处理方法包括将基板加载到处理室中，将包含碳和氢的硅化合物气体供应到处理室中，向供应到处理室中的硅化合物气体照射紫外光以处理基板，将处理的基板从 处理室，并用激发的含氧气体处理处理室的内部。 因此，可以用被激发的含氧气体处理在硅化合物气体上照射紫外线以处理基板并粘附到诸如处理室的内壁的结构的结构时产生的附着物质以进行改性。