公开(公告)号：US20110210118A1

公开(公告)日：2011-09-01

申请号：US13034035

申请日：2011-02-24

申请人： Yukitomo HIROCHI ,  Akinori TANAKA ,  Akihiro SATO ,  Takeshi ITOH ,  Daisuke HARA ,  Kenji SHIRAKO ,  Kazuhiro MORIMITSU ,  Masanao FUKUDA

发明人： Yukitomo HIROCHI ,  Akinori TANAKA ,  Akihiro SATO ,  Takeshi ITOH ,  Daisuke HARA ,  Kenji SHIRAKO ,  Kazuhiro MORIMITSU ,  Masanao FUKUDA

IPC分类号： H05B6/10

CPC分类号： H05B6/108

摘要： There are provided a substrate processing apparatus and a method of manufacturing a substrate in which induction heating of members made of a metal material and installed outside an induction coil is suppressed and safety may be improved during processing of a substrate. The substrate processing apparatus includes: a reaction tube for accommodating a substrate; an induction heating unit installed to surround an outer circumference of the reaction tube; a shielding unit installed to surround an outside of the induction heating unit; a gas supply unit for supplying at least a source gas into the reaction tube; and a controller for processing the substrate by heating an inside of the reaction tube using the induction heating unit, and supplying at least the source gas from the gas supply unit into the reaction tube.

摘要翻译： 提供了一种基板处理装置和制造基板的方法，其中抑制了由金属材料制成并且安装在感应线圈外部的构件的感应加热，并且在基板的加工期间可以改善安全性。 基板处理装置包括：用于容纳基板的反应管; 感应加热单元，安装成围绕反应管的外周; 屏蔽单元，安装成围绕感应加热单元的外部; 气体供给单元，用于至少将源气体供给到所述反应管中; 以及控制器，其通过使用所述感应加热单元加热所述反应管的内部来处理所述基板，并且至少将来自所述气体供应单元的源气体供应到所述反应管中。

公开(公告)号：US20120067274A1

公开(公告)日：2012-03-22

申请号：US13036304

申请日：2011-02-28

申请人： Daisuke HARA ,  Kazuhiro SHIMURA ,  Masaki MUROBAYASHI ,  Yukitomo HIROCHI

发明人： Daisuke HARA ,  Kazuhiro SHIMURA ,  Masaki MUROBAYASHI ,  Yukitomo HIROCHI

IPC分类号： C30B25/02 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C16/4583 ,  C23C16/4585 ,  C30B25/08 ,  C30B25/12 ,  C30B29/36

摘要： A wafer holder used in a film forming apparatus is disclosed. The wafer holder including a boat holding a plurality of wafers and a reaction gas supply part supplying a reaction gas from a side surface of the plurality of wafers held by the boat, and the wafer holder further includes an upper wafer holder being placed to cover an upper surface of each of the plurality of wafers when the plurality of wafer is supported by the boat and including a gas introduction suppression part suppressing an introduction of the reaction gas onto the upper surface of each the plurality of wafers by surrounding each of the plurality of wafers.

摘要翻译： 公开了一种用于成膜设备的晶片保持架。 所述晶片保持器包括容纳多个晶片的舟皿和从由所述舟皿保持的所述多个晶片的侧表面提供反应气体的反应气体供应部分，并且所述晶片保持器还包括上晶片保持器， 当所述多个晶片由所述舟状体支撑时，所述多个晶片中的每一个的上表面包括气体引入抑制部，其抑制所述反应气体通过围绕所述多个晶片中的每一个而引导到所述多个晶片的上表面上 晶圆

公开(公告)号：US09084298B2

公开(公告)日：2015-07-14

申请号：US13034035

申请日：2011-02-24

申请人： Yukitomo Hirochi ,  Akinori Tanaka ,  Akihiro Sato ,  Takeshi Itoh ,  Daisuke Hara ,  Kenji Shirako ,  Kazuhiro Morimitsu ,  Masanao Fukuda

发明人： Yukitomo Hirochi ,  Akinori Tanaka ,  Akihiro Sato ,  Takeshi Itoh ,  Daisuke Hara ,  Kenji Shirako ,  Kazuhiro Morimitsu ,  Masanao Fukuda

IPC分类号： H05B6/10 ,  H05B6/02

CPC分类号： H05B6/108

摘要： There are provided a substrate processing apparatus capable of suppressing leakage of magnetic field during processing of a substrate. The substrate processing apparatus of the present invention includes: a reaction tube having a processing chamber provided therein to process a substrate; an induction heating unit installed outside of the reaction tube to accommodate the reaction tube, wherein the induction heating unit is configured to electromagnetically induction-heat the processing chamber by generating a magnetic field; an accommodation tube installed outside of the induction heating unit to accommodate the induction heating unit, wherein the accommodation tube accommodates the reaction tube and the induction heating unit in an air-tight manner; a shielding unit made of a conductive material installed to surround an outside of the accommodation tube; and an inert gas supply unit installed in a gap between the reaction tube and the accommodation tube where the induction heating unit is installed, wherein the inert gas supply unit is configured to supply an inert gas into the gap.

摘要翻译： 提供了能够抑制基板的加工过程中的磁场泄漏的基板处理装置。 本发明的基板处理装置包括：反应管，其具有设置在其中的处理室，用于处理基板; 感应加热单元，其安装在所述反应管的外部以容纳所述反应管，其中所述感应加热单元被构造成通过产生磁场对所述处理室进行电磁感应加热; 安装在所述感应加热单元外部以容纳所述感应加热单元的容纳管，其中所述容纳管以气密方式容纳所述反应管和所述感应加热单元; 由导电材料制成的屏蔽单元，该导电材料安装成围绕容纳管的外侧; 以及安装在所述反应管与所述感应加热单元的所述容纳管之间的间隙中的惰性气体供给单元，其中，所述惰性气体供给单元构造成将惰性气体供给到所述间隙。

公开(公告)号：US20090176381A1

公开(公告)日：2009-07-09

申请号：US12344899

申请日：2008-12-29

申请人： Shin HIYAMA ,  Toru Kakuda ,  Yukitomo Hirochi

发明人： Shin HIYAMA ,  Toru Kakuda ,  Yukitomo Hirochi

IPC分类号： H01L21/26 ,  B01J19/08

CPC分类号： H01L21/6719 ,  G03F7/427 ,  H01J37/321 ,  H01L21/31138 ,  H01L21/67196 ,  H01L21/67201

摘要： There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus that are designed to suppress a popping phenomenon and reduce residues remaining on a substrate in a photoresist removing process. Oxygen gas and hydrogen gas are supplied to a plasma generating chamber while maintaining the hydrogen atom/oxygen atom ratio of the oxygen and hydrogen gases equal to or higher than 3, and the oxygen gas and the hydrogen gas are excited into plasma in the plasma generating chamber so as to remove photoresist from a substrate accommodated in a treatment chamber installed contiguous to the plasma generating chamber.

摘要翻译： 提供一种制造半导体器件和基板处理设备的方法，其被设计为抑制光刻胶去除工艺中的弹出现象并减少残留在基板上的残余物。 将氧气和氢气供给到等离子体发生室，同时保持氧气和氢气的氢原子/氧原子比等于或高于3，并且氧气和氢气在等​​离子体产生中被激发成等离子体 从而从容纳在与等离子体发生室邻接设置的处理室中的基板上除去光致抗蚀剂。

公开(公告)号：US09028191B2

公开(公告)日：2015-05-12

申请号：US13163165

申请日：2011-06-17

申请人： Takeshi Yasui ,  Yukitomo Hirochi ,  Satoshi Takano ,  Ritsuo Horii ,  Makoto Kawabata

发明人： Takeshi Yasui ,  Yukitomo Hirochi ,  Satoshi Takano ,  Ritsuo Horii ,  Makoto Kawabata

IPC分类号： H01L21/67 ,  H01J37/32

CPC分类号： H01L21/67196 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32889 ,  H01J37/32899 ,  H01L21/67201

摘要： Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber. The substrate processing apparatus includes a load lock chamber configured to accommodate stacked substrates; a first transfer mechanism having a first transfer arm provided with a first end effector, and configured to transfer the substrates into/from the load lock chamber at a first side of the load lock chamber; a second transfer mechanism having a second transfer arm provided with a second end effector, and configured to transfer the substrates into/from the load lock chamber at a second side of the load lock chamber; a barrier installed between the substrates to be spaced apart from the substrates supported by a substrate support provided in the load lock chamber; and an auxiliary barrier unit installed between the substrate support and the barrier, wherein the auxiliary barrier unit is installed at places other than standby spaces of the end effectors.

摘要翻译： 由于具有较低温度的基板在冷却室中冷却多个基板的同时不受具有较高温度的基板的辐射热的影响，因此抑制了具有较低温度的基板的冷却速率的降低。 基板处理装置包括：负载锁定室，被配置为容纳堆叠的基板; 第一传送机构，其具有设置有第一端部执行器的第一传送臂，并且被配置为在所述负载锁定室的第一侧将所述基板传送到所述负载锁定室中或从所述负载锁定室传送; 第二传送机构，具有设置有第二端部执行器的第二传送臂，并且被配置为在所述负载锁定室的第二侧将所述基板传送到所述负载锁定室中或从所述负载锁定室传送; 安装在基板之间的屏障，其与由设置在负载锁定室中的基板支撑件支撑的基板间隔开; 以及安装在所述基板支撑件和所述屏障之间的辅助屏障单元，其中所述辅助屏障单元安装在所述末端执行器的备用空间以外的位置。

公开(公告)号：US20110311339A1

公开(公告)日：2011-12-22

申请号：US13163165

申请日：2011-06-17

申请人： Takeshi YASUI ,  Yukitomo HIROCHI ,  Satoshi TAKANO ,  Ritsuo HORII ,  Makoto KAWABATA

发明人： Takeshi YASUI ,  Yukitomo HIROCHI ,  Satoshi TAKANO ,  Ritsuo HORII ,  Makoto KAWABATA

IPC分类号： H01L21/677

CPC分类号： H01L21/67196 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32889 ,  H01J37/32899 ,  H01L21/67201

摘要： Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber. The substrate processing apparatus includes a load lock chamber configured to accommodate stacked substrates; a first transfer mechanism having a first transfer arm provided with a first end effector, and configured to transfer the substrates into/from the load lock chamber at a first side of the load lock chamber; a second transfer mechanism having a second transfer arm provided with a second end effector, and configured to transfer the substrates into/from the load lock chamber at a second side of the load lock chamber; a barrier installed between the substrates to be spaced apart from the substrates supported by a substrate support provided in the load lock chamber; and a barrier auxiliary unit installed between the substrate support and the barrier, wherein the barrier auxiliary unit is installed at places other than standby spaces of the end effectors.

摘要翻译： 由于具有较低温度的基板在冷却室中冷却多个基板的同时不受具有较高温度的基板的辐射热的影响，因此抑制了具有较低温度的基板的冷却速率的降低。 基板处理装置包括：负载锁定室，被配置为容纳堆叠的基板; 第一传送机构，其具有设置有第一端部执行器的第一传送臂，并且被配置为在所述负载锁定室的第一侧将所述基板传送到所述负载锁定室中或从所述负载锁定室传送; 第二传送机构，具有设置有第二端部执行器的第二传送臂，并且被配置为在所述负载锁定室的第二侧将所述基板传送到所述负载锁定室中或从所述负载锁定室传送; 安装在基板之间的屏障，其与由设置在负载锁定室中的基板支撑件支撑的基板间隔开; 以及安装在基板支撑件和屏障之间的屏障辅助单元，其中屏障辅助单元安装在末端执行器的备用空间以外的位置。