- 专利标题： CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY
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申请号： US12403776申请日： 2009-03-13
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公开(公告)号： US20090181483A1公开(公告)日： 2009-07-16
- 发明人: Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 优先权： JP2002-188846 20020628
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/26 ; H01L21/78
摘要：
A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.
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