发明申请
- 专利标题: DISPOSABLE METALLIC OR SEMICONDUCTOR GATE SPACER
- 专利标题(中): 可拆卸金属或半导体门间隔
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申请号: US12016326申请日: 2008-01-18
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公开(公告)号: US20090186455A1公开(公告)日: 2009-07-23
- 发明人: Stephen W. Bedell , Michael Chudzik , William K. Henson , Naim Moumen , Vijay Narayanan , Devendra K. Sadana , Kathryn T. Schonenberg , Ghavam Shahidi
- 申请人: Stephen W. Bedell , Michael Chudzik , William K. Henson , Naim Moumen , Vijay Narayanan , Devendra K. Sadana , Kathryn T. Schonenberg , Ghavam Shahidi
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A disposable spacer is formed directly on or in close proximity to the sidewalls of a gate electrode and a gate dielectric. The disposable spacer comprises a material that scavenges oxygen such as a metal, a metal nitride, or a semiconductor material having high reactivity with oxygen. The disposable gate spacer absorbs any oxygen during subsequent high temperature processing such as a stress memorization anneal. A metal is deposited over, and reacted with, the gate electrode and source and drain regions to form metal semiconductor alloy regions. The disposable gate spacer is subsequently removed selective to the metal semiconductor alloy regions. A porous or non-porous low-k dielectric material is deposited to provide a low parasitic capacitance between the gate electrode and the source and drain regions. The gate dielectric maintains the original dielectric constant since the disposable gate spacer prevents absorption of additional oxygen during high temperature processes.
公开/授权文献
- US07682917B2 Disposable metallic or semiconductor gate spacer 公开/授权日:2010-03-23